Growth and Characterization of -Plane GaN Thin Films Grown on -LiAlO (100) Substrates.

-plane GaN thin films were grown on LiAlO substrates under different N/Ga flux ratios by plasma-assisted molecular beam epitaxy. An anisotropic growth of -plane GaN was demonstrated against the N/Ga flux ratio. As the N/Ga flux ratio decreased by increasing Ga flux, the GaN surface trended to a flat morphology with stripes along [11[Formula: see text]0]. According to high-resolution X-ray diffraction analysis, LiGaO was observed on the interface between GaN and LiAlO substrate. The formation of LiGaO would influence the surface morphology and crystal quality.