We report on the existence of two different regimes in one-step Ag-seeded InP nanowire growth. The vapor-liquid-solid-mechanism is present at larger In precursor flows and temperatures, ∼500 °C, yielding high aspect ratio and pure wurtzite InP nanowires with a semi-spherical metal particle at the thin apex. Periodic diameter oscillations can be achieved under extreme In supersaturations at this temperature range, showing the presence of a liquid catalyst. However, under lower temperatures and In precursor flows, large diameter InP nanowires with mixed wurtzite/zincblende segments are obtained, similarly to In-assisted growth. Chemical composition analysis suggest that In-rich droplet formation is catalyzed at the substrate surface via Ag nanoparticles; this process might be facilitated by the sulfur contamination detected in these nanoparticles. Furthermore, part of the original Ag nanoparticle remains solid and is embedded inside the actual catalyst, providing an in situ method to switch growth mechanisms upon changing In precursor flow. Nevertheless, our Ag-seeded InP nanowires exhibit overall optical emission spectra consistent with the observed structural properties and similar to Au-catalyzed InP nanowires. We thus show that Ag nanoparticles may be a suitable replacement for Au in InP nanowire growth.
Download full-text PDF |
Source |
---|---|
http://dx.doi.org/10.1088/1361-6528/aa9816 | DOI Listing |
Nanotechnology
January 2025
University Lille, CNRS, Centrale Lille, ISEN, University Valenciennes, UMR 8520-IEMN, F-59000 Lille, France.
InSb is a material of choice for infrared as well as spintronic devices but its integration on large lattice mismatched semi-insulating III-V substrates has so far altered its exceptional properties. Here, we investigate the direct growth of InSb on InP(111)substrates with molecular beam epitaxy. Despite the lack of a thick metamorphic buffer layer for accommodation, we show that quasi-continuous thin films can be grown using a very high Sb/In flux ratio.
View Article and Find Full Text PDFAdv Sci (Weinh)
December 2024
College of Photonics, National Yang Ming Chiao Tung University, 301 Gaofa 3rd Road, Tainan, 71150, Taiwan.
Nanoscale light sources are demanded vigorously due to rapid development in photonic integrated circuits (PICs). III-V semiconductor nanowire (NW) lasers have manifested themselves as indispensable components in this field, associated with their extremely compact footprint and ultra-high optical gain within the 1D cavity. In this study, the carrier concentrations of indium phosphide (InP) NWs are actively controlled to modify their emissive properties at room temperature.
View Article and Find Full Text PDFACS Nano
December 2024
University Bordeaux, CNRS, Bordeaux INP, ICMCB, UMR 5026, F-33600 Pessac, France.
This article describes an approach to making highly stable copper nanowire networks on any type of substrates. These nanostructured materials are highly sought after for, among other applications, the development of next-generation flexible electronics. Their high susceptibility to oxidation in air currently limits their use in the real world.
View Article and Find Full Text PDFNanotechnology
December 2024
Division of Synchrotron Radiation Research and NanoLund, Department of Physics, Lund University, Box 118, 22100 Lund, Sweden.
Nanowire (NW) optoelectronic and electrical devices offer unique advantages over bulk materials but are generally made by contacting entire NW arrays in parallel. In contrast, ultra-high-resolution displays and photodetectors require electrical connections to individual NWs inside an array. Here, we demonstrate a scheme for fabricating such single NW vertical devices by contacting individual NWs within a dense NW array.
View Article and Find Full Text PDFNano Lett
November 2024
School of Physics and Astronomy, University of Minnesota, Minneapolis, Minnesota 55455, United States.
Josephson junctions are typically characterized by a single phase difference across two superconductors. This conventional two-terminal Josephson junction can be generalized to a multiterminal device where the Josephson energy contains terms with contributions from multiple independent phase variables. Such multiterminal Josephson junctions (MTJJs) are being considered as platforms for engineering effective Hamiltonians with nontrivial topologies, such as Weyl crossings and higher-order Chern numbers.
View Article and Find Full Text PDFEnter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!