Exploration of the electronics solely composed of bottom-up synthesized nanowires has been largely limited due to the complex multistep integration of diverse nanowires. We report a single-step, selective, direct, and on-demand laser synthesis of a hierarchical heterogeneous nanowire-on-nanowire structure (secondary nanowire on the primary backbone nanowire) without using any conventional photolithography or vacuum deposition. The highly confined temperature rise by laser irradiation on the primary backbone metallic nanowire generates a highly localized nanoscale temperature field and photothermal reaction to selectively grow secondary branch nanowires along the backbone nanowire. As a proof-of-concept for an all-nanowire electronics demonstration, an all-nanowire UV sensor was successfully fabricated without using conventional fabrication processes.
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http://dx.doi.org/10.1021/acsnano.7b06098 | DOI Listing |
Nanotechnology
January 2025
College of Materials Science and Engineering, Taiyuan University of Technology, Taiyuan 030024, People's Republic of China.
The performance of silver nanowire (AgNW) network flexible transparent electrodes is limited by large contact resistance, making it necessary to perform nanowelding to improve conductivity of the network. However, not all nanowire junctions can be welded. Our work indicates that the welding kinetics between nanowires depend on the crossing angle, with higher surface diffusion velocity prone to welding and fracture at nanowire junctions of crossing angles close to 90 degrees.
View Article and Find Full Text PDFAdv Mater
April 2020
State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences and Center of Materials Science and Optoelectronic Engineering, University of Chinese Academy of Sciences, Beijing, 100083, China.
Infrared (IR) photodetectors are a key optoelectronic device and have thus attracted considerable research attention in recent years. Photosensitivity is an increasingly important device performance parameter for nanoscale photodetectors and image sensors, as it determines the ultimate imaging quality and contrast. However, photosensitivities of state-of-the-art low-dimensional nanostructure-based IR detectors are considerably low, limiting their practical applications.
View Article and Find Full Text PDFACS Nano
December 2017
Applied Nano and Thermal Science Lab, Department of Mechanical Engineering, Seoul National University, 1 Gwanak-ro, Gwanak-gu, Seoul 08826, Korea.
Exploration of the electronics solely composed of bottom-up synthesized nanowires has been largely limited due to the complex multistep integration of diverse nanowires. We report a single-step, selective, direct, and on-demand laser synthesis of a hierarchical heterogeneous nanowire-on-nanowire structure (secondary nanowire on the primary backbone nanowire) without using any conventional photolithography or vacuum deposition. The highly confined temperature rise by laser irradiation on the primary backbone metallic nanowire generates a highly localized nanoscale temperature field and photothermal reaction to selectively grow secondary branch nanowires along the backbone nanowire.
View Article and Find Full Text PDFNano Lett
July 2015
Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, D-10117 Berlin, Germany.
We study the electronic properties of axial In(x)Ga(1-x)N/GaN nanowire heterostructures with randomly placed ionized donors. Our simulations are based on an eight-band k·p model and indicate large variations of both the ground state transition energy and the spatial distribution of the electron and hole charge density. We show that these variations are intrinsic to nanostructures containing ionized donors and that the presence of donors has important consequences for all nanowire-based light-emitting devices including single-photon emitters required for quantum computing and quantum cryptography.
View Article and Find Full Text PDFProc Natl Acad Sci U S A
August 2008
Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA 94720, USA.
We report large-scale integration of nanowires for heterogeneous, multifunctional circuitry that utilizes both the sensory and electronic functionalities of single crystalline nanomaterials. Highly ordered and parallel arrays of optically active CdSe nanowires and high-mobility Ge/Si nanowires are deterministically positioned on substrates, and configured as photodiodes and transistors, respectively. The nanowire sensors and electronic devices are then interfaced to enable an all-nanowire circuitry with on-chip integration, capable of detecting and amplifying an optical signal with high sensitivity and precision.
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