We investigate the effect of k-cubic spin-orbit interaction on the electrical and thermoelectric transport properties of two-dimensional fermionic systems. We obtain exact analytical expressions of the inverse relaxation time (IRT) and the Drude conductivity for long-range Coulomb and short-range delta scattering potentials. The IRT reveals that the scattering is completely suppressed along the three directions [Formula: see text] with [Formula: see text]. We also obtain analytical results of the thermopower and thermal conductivity at low temperature. The thermoelectric transport coefficients obey the Wiedemann-Franz law, even in the presence of k-cubic Rashba spin-orbit interaction (RSOI) at low temperature. In the presence of a quantizing magnetic field, the signature of the RSOI is revealed through the appearance of the beating pattern in the Shubnikov-de Haas (SdH) oscillations of thermopower and thermal conductivity in the low magnetic field regime. The empirical formulae for the SdH oscillation frequencies accurately describe the locations of the beating nodes. The beating pattern in magnetothermoelectric measurement can be used to extract the spin-orbit coupling constant.
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http://dx.doi.org/10.1088/1361-648X/aa89b9 | DOI Listing |
Science
January 2025
Center for Bioinspired Science and Technology, Hangzhou International Innovation Institute, Beihang University, Hangzhou, China.
Thermoelectrics have been limited by the scarcity of their constituent elements, especially telluride. The earth-abundant, wide-bandgap ( ≈ 46 ) tin sulfide (SnS) has shown promising performance in its crystal form. We improved the thermoelectric efficiency in SnS crystals by promoting the convergence of energy and momentum of four valance bands, termed quadruple-band synglisis.
View Article and Find Full Text PDFChem Sci
January 2025
State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University Beijing 100084 China
Thermoelectric technology plays an important role in developing sustainable clean energy and reducing carbon emissions, offering new opportunities to alleviate current energy and environmental crises. Nowadays, GeTe has emerged as a highly promising thermoelectric candidate for mid-temperature applications, due to its remarkable thermoelectric figure of merit () of 2.7.
View Article and Find Full Text PDFMaterials (Basel)
December 2024
School of Electrical and Computer Engineering, Ben Gurion University of the Negev, Beer Sheba 8410501, Israel.
Nowadays, polycrystalline lead telluride is one of the premier substances for thermoelectric devices while remaining a hopeful competitor to current semiconductor materials used in mid-infrared photonic applications. Notwithstanding that, the development of reliable and reproducible routes for the synthesis of PbTe thin films has not yet been accomplished. As an effort toward this aim, the present article reports progress in the growth of polycrystalline indium-doped PbTe films and their study.
View Article and Find Full Text PDFSmall
January 2025
Department of Materials Science and Engineering, National Yang-Ming Chiao Tung University, Hsinchu, 30010, Taiwan.
Silver chalcogenides exhibit exceptional transport properties but face structural instability at high temperatures, limiting their practical applications. Using AgTe as a model, it is confirm that silver whisker growth above the phase transition renders AgTe unsuitable for thermoelectric applications. Here, the whisker growth mechanism is investigated and propose an inhibition strategy, overcoming a major obstacle in using silver chalcogenides.
View Article and Find Full Text PDFNanoscale
January 2025
Department of Physics, Indian Institute of Technology Patna, Bihta, Bihar, 801106, India.
In this study, we investigate a novel hybrid borocarbonitride (bpn-BCN) 2D material inspired by recent advances in carbon biphenylene synthesis, using first-principles calculations and semi-classical Boltzmann transport theory. Our analysis confirms the structural stability of bpn-BCN through formation energy, elastic coefficients, phonon dispersion, and molecular dynamics simulations at 300 K and 800 K. The material exhibits an indirect band gap of 0.
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