High frequency oscillations (HFOs) are recognized as biomarkers for epileptogenic brain tissue. A remaining challenge for epilepsy surgery is the prospective classification of tissue sampled by individual electrode contacts. We analysed long-term invasive recordings of 20 consecutive patients who subsequently underwent epilepsy surgery. HFOs were defined prospectively by a previously validated, automated algorithm in the ripple (80-250 Hz) and the fast ripple (FR, 250-500 Hz) frequency band. Contacts with the highest rate of ripples co-occurring with FR over several five-minute time intervals designated the HFO area. The HFO area was fully included in the resected area in all 13 patients who achieved seizure freedom (specificity 100%) and in 3 patients where seizures reoccurred (negative predictive value 81%). The HFO area was only partially resected in 4 patients suffering from recurrent seizures (positive predictive value 100%, sensitivity 57%). Thus, the resection of the prospectively defined HFO area proved to be highly specific and reproducible in 13/13 patients with seizure freedom, while it may have improved the outcome in 4/7 patients with recurrent seizures. We thus validated the clinical relevance of the HFO area in the individual patient with an automated procedure. This is a prerequisite before HFOs can guide surgical treatment in multicentre studies.
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http://dx.doi.org/10.1038/s41598-017-13064-1 | DOI Listing |
Brain
November 2024
Klinik für Neurochirurgie, Universitätsspital Zürich, Universität Zürich, 8091, Zurich, Switzerland.
In drug-resistant focal epilepsy, planning surgical resection may involve presurgical intracranial EEG recordings (iEEG) to detect seizures and other iEEG patterns to improve postsurgical seizure outcome. We hypothesized that resection of tissue generating interictal high frequency oscillations (HFOs, 80-500 Hz) in the iEEG predicts surgical outcome. Eight international epilepsy centres recorded iEEG during the patients' pre-surgical evaluation.
View Article and Find Full Text PDFNanotechnology
October 2024
Department of Physics, Gebze Technical University, Gebze, Kocaeli, Turkey.
Clin Neurophysiol
November 2024
Department of Pediatrics, Children's Hospital of Michigan, Detroit Medical Center, Wayne State University, Detroit, MI 48201, USA; Department of Neurology, Children's Hospital of Michigan, Detroit Medical Center, Wayne State University, Detroit, MI 48201, USA; Department of Pediatrics, Central Michigan University, Mt. Pleasant, MI 48858, USA. Electronic address:
ACS Appl Nano Mater
August 2024
Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands.
ACS Nano
August 2024
Department of Materials Science and Engineering, Yonsei University, Seoul 03722, South Korea.
In this work, we report an n-type metal-oxide-semiconductor (nMOS) inverter using chemical vapor deposition (CVD)-grown monolayer WS field-effect transistors (FETs). Our large-area CVD-grown monolayer WS FETs exhibit outstanding electrical properties including a high on/off ratio, small subthreshold swing, and excellent drain-induced barrier lowering. These are achieved by n-type doping using AlO/AlO and a double-gate structure employing high- dielectric HfO.
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