Utilizing electromagnetically induced transparency in InAs quantum dots for all-optical transistor design.

We propose a multilayer medium with semiconductor quantum dot nano-structures as a defect layer for all-optical control of the 1.55 μm probe beam. The effect of the coupling field and incoherent pump on absorption and dispersion properties of the quantum dot defect layer is investigated. Depending on the intensity of the coupling field and rate of the incoherent pump field, the possibility of the absorption cancellation and even amplification are demonstrated. The optimum values of the coupling field intensity and incoherent pump field for complete transmission or amplification are obtained. The dynamical behavior of the structure is investigated, and the estimated switching time scales are about tens of picoseconds.