On-chip membrane-based GaInAs/InP waveguide-type p-i-n photodiode fabricated on silicon substrate.

Toward the realization of ultralow-power-consumption on-chip optical interconnection, two types of membrane-based GaInAs/InP p-i-n photodiodes were fabricated on Si host substrates by using benzocyclobutene bonding. A responsivity of 0.95 A/W was estimated with a conventional waveguide-type photodiode with an ∼30-μm-long absorption region. The fitting curves based on the experimental data indicated that an absorption efficiency above 90% could be achieved with a length of 10 μm. In addition, increased absorption per length of a photonic crystal waveguide-type photodiode was obtained because of the enhanced lateral optical confinement or the slow-light effect, enabling a further reduction in the device length.