Junction Quality of SnO-Based Perovskite Solar Cells Investigated by Nanometer-Scale Electrical Potential Profiling.

Electron-selective layers (ESLs) and hole-selective layers (HSLs) are critical in high-efficiency organic-inorganic lead halide perovskite (PS) solar cells for charge-carrier transport, separation, and collection. We developed a procedure to assess the quality of the ESL/PS junction by measuring potential distribution on the cross section of SnO-based PS solar cells using Kelvin probe force microscopy. Using the potential profiling, we compared three types of cells made of different ESLs but otherwise having an identical device structure: (1) cells with PS deposited directly on bare fluorine-doped SnO (FTO)-coated glass; (2) cells with an intrinsic SnO thin layer on the top of FTO as an effective ESL; and (3) cells with the SnO ESL and adding a self-assembled monolayer (SAM) of fullerene. The results reveal two major potential drops or electric fields at the ESL/PS and PS/HSL interfaces. The electric-field ratio between the ESL/PS and PS/HSL interfaces increased in devices as follows: FTO < SnO-ESL < SnO + SAM; this sequence explains the improvements of the fill factor (FF) and open-circuit voltage (V). The improvement of the FF from the FTO to SnO-ESL cells may result from the reduction in voltage loss at the PS/HSL back interface and the improvement of V from the prevention of hole recombination at the ESL/PS front interface. The further improvements with adding an SAM is caused by the defect passivation at the ESL/PS interface, and hence, improvement of the junction quality. These nanoelectrical findings suggest possibilities for improving the device performance by further optimizing the SnO-based ESL material quality and the ESL/PS interface.