AI Article Synopsis
- Short-wavelength luminescence is crucial for creating efficient optoelectronic devices, leading researchers to explore ways to boost ultraviolet (UV) emissions through the encapsulation of ZnO with ZnS.
- This study presents findings on ZnS-core/ZnO-shell nanorods that demonstrate significantly higher UV emission compared to the previously studied ZnO-core/ZnS-shell type, notably reaching an intensity 16 times more than uncoated ZnS nanorods.
- The enhanced UV emission and suppression of undesirable deep level emissions in ZnS are attributed to a combination of factors, including synergistic emissions from both layers, effective carrier transfer, and reduced surface state interactions.
Article Abstract
Short-wavelength luminescence is essential for high-performance optoelectronic device applications. There have been efforts to obtain intense ultraviolet (UV) emission by encapsulating ZnO one-dimensional (1D) nanostructures with materials such as ZnS. However, the encapsulation of ZnS 1D nanostructures with ZnO has not been reported. In this paper, we report ultraintense UV emission from ZnS nanorods coated with ZnO, i.e., ZnS-core/ZnO-shell nanorods. UV emission from the ZnS-core/ZnO-shell nanorods was much more intense than that obtained from the extensively studied ZnO-core/ZnS-shell nanorods. The highest intensity of the near-band-edge emission from the ZnS-core/ZnO-shell nanorods was obtained with a ZnO shell layer thickness of 35 nm, which is ∼16 times higher than that of pristine ZnS nanorods. Moreover, the deep level (DL) emission was suppressed completely. The substantial enhancement of the UV emission from the ZnS nanorods and the complete suppression of the DL emission by ZnO sheathing can be rationalized by combining the following four effects: the reinforcement of the UV emission by the overlap of the UV emissions from the ZnS core and ZnO shell, enhancement of the emission from the ZnO shell by the carrier transfer from the ZnS core to the ZnO shell, suppression of the capture of carriers by the surface states on the ZnS surface, and suppression of the visible emission and nonradiative recombination in ZnS.
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| http://www.ncbi.nlm.nih.gov/pmc/articles/PMC5638997 | PMC |
| http://dx.doi.org/10.1038/s41598-017-13556-0 | DOI Listing |
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