The reaction of ClGaH with a sodium salt of the dpp-Bian radical-anion (dpp-Bian)Na (dpp-Bian = 1,2-bis[(2,6-diisopropylphenyl)imino]acenaphthene) affords paramagnetic gallane (dpp-Bian)Ga(Cl)H (1). Oxidation of (dpp-Bian)Ga-Ga(dpp-Bian) (2) with NO results in the dimeric oxide (dpp-Bian)Ga(μ-O)Ga(dpp-Bian) (3). A treatment of the oxide 3 with phenylsilane affords paramagnetic gallium hydrides (dpp-Bian)GaH (4) and (dpp-Bian)Ga{OSi(Ph)H}H (5) depending on the reagent's stoichiometry. The reaction of digallane 2 with benzaldehyde produces pinacolate (dpp-Bian)Ga(OCHPh) (6). In the presence of PhSiH, the reaction between digallane 2 and benzaldehyde (2: PhSiH: PhC(H)O = 1:4:4) affords compound 4. The newly prepared complexes 1, 3-6 consist of a spin-labeled diimine ligand-dpp-Bian radical-anion. The presence of the ligand-localized unpaired electron allows the use of the ESR spectroscopy for characterization of the gallium hydrides reported. The molecular structures of compounds 1, 3-6 have been determined by the single-crystal X-ray analysis.
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http://dx.doi.org/10.1021/acs.inorgchem.7b02138 | DOI Listing |
J Phys Chem Lett
November 2024
State Key Laboratory of Catalysis, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian 116023, China.
Materials (Basel)
August 2024
Electrical and Computer Engineering, The University of Utah, Salt Lake City, UT 84112, USA.
Adv Sci (Weinh)
November 2024
Department of Material Science and Engineering, National Taiwan University, Taipei, 10617, Taiwan.
Free-standing gallium nitride has been prepared using various methods; however, the removal of the original substrate is still challenging with low success rates. In this work, 2-inch free-standing GaN films are obtained by direct growth on a fluoro phlogopite mica by hydride vapor-phase epitaxy. Depending on the van der Waals (vdW) interaction between GaN and mica, the effect of the significant lattice mismatch is effectively reduced; thus, enabling the production of a high-quality wafer-scale GaN film on mica.
View Article and Find Full Text PDFAngew Chem Int Ed Engl
September 2024
Russian Academy of Sciences, N. D. Zelinsky Institute of Organic Chemistry, 47 Leninsky prosp., 119991, Moscow, Russian Federation.
The design of various cycloaddition/annulation processes is one of the most intriguing challenges in the development of donor-acceptor (D-A) cyclopropane chemistry. In this work, a new class of formal high-order [6+n]-cycloaddition and annulation processes of D-A cyclopropanes with cycloheptatriene systems has been designed and reported, to fill a significant gap in the chemistry of D-A cyclopropanes. The reactivity of methylated cycloheptatrienes from Me1 to Me5 as well as unsubstituted cycloheptatriene was studied in detail under GaCl activation conditions, which makes it possible to efficiently generate gallium 1,2-zwitterionic complexes or 1,3-zwitterionic intermediates starting from D-A cyclopropanes, while other Lewis acids are ineffective and non-selective.
View Article and Find Full Text PDFChempluschem
July 2024
School of Chemical Sciences, National Institute of Science Education and Research (NISER), Homi Bhabha National Institute (HBNI), Bhubaneswar, 752050, India.
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