A comprehensive investigation of magnetostriction optimization in Metglas 2605SA1 ribbons is performed to enhance magnetoelectric performance. We explore a range of annealing conditions to relieve remnant stress and align the magnetic domains in the Metglas, while minimizing unwanted crystallization. The magnetostriction coefficient, magnetoelectric coefficient, and magnetic domain alignment are correlated to optimize magnetoelectric performance. We report on direct magnetostriction observed by in-plane Doppler vibrometer and domain imagining using scanning electron microscopy with polarization analysis for a range of annealing conditions. We find that annealing in an oxygen-free environment at 400 °C for 30 min yields an optimal magnetoelectric coefficient, magnetostriction and magnetostriction coefficient. The optimized ribbons had a magnetostriction of 50.6 ± 0.2 m m and magnetoelectric coefficient of 79.3 ± 1.5 m m mT. The optimized Metglas 2605SA1 ribbons and PZT-5A (d mode) sensor achieves a magnetic noise floor of approximately 600 pT Hz at 100 Hz and a magnetoelectric coefficient of 6.1 ± 0.03 MV m T.
Download full-text PDF |
Source |
---|---|
http://www.ncbi.nlm.nih.gov/pmc/articles/PMC5615411 | PMC |
http://dx.doi.org/10.1088/1361-665X/aa770b | DOI Listing |
J Phys Condens Matter
January 2025
Department of Physics, University of Kerala, Karyavattom 695581, Thiruvananthapuram, Kerala, India.
The effects of Na doping on the structure magnetic, electric, and magnetoelectric properties of GaFeOwere studied. Rietveld refinement of the XRD data reveals the formation of a single-phase trigonal structure with no impurity on Na doping up to 50% and a significant increase in lattice strain with doping. FTIR and Raman analysis further supported the phase purity of the samples.
View Article and Find Full Text PDFMaterials (Basel)
November 2024
Faculty of Physics, Sofia University "St. Kliment Ohridski", J. Bouchier Blvd. 5, 1164 Sofia, Bulgaria.
Using Green's function theory and a microscopic model, the multiferroic properties of Co4Nb2O9 are investigated theoretically. There are some discrepancies in the discussion of the electric and dielectric behavior of CNO with and without external magnetic fields. We try to clarify them.
View Article and Find Full Text PDFSmall
December 2024
Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices, School of Physics, Sun Yat-sen University, Guangzhou, 510275, China.
Vanadium dioxide as a strongly correlated electron material undergoes metal-insulator phase transitions and ferroelastic domain switching which highly couple to local strain distribution. Understanding the mechanisms and achieving the modulations require precise and high-resolution characterization of strain in vanadium dioxide. Micro-Raman spectroscopy is widely used to nondestructively characterize the strain on the surface of materials.
View Article and Find Full Text PDFSmall
November 2024
Department of Chemical Sciences, Indian Institute of Science Education and Research Mohali, Knowledge City, Sector 81, SAS Nagar, Punjab, India.
Magnetoelectric materials are highly desirable for technological applications due to their ability to produce electricity under a magnetic field. Among the various types of magnetoelectric materials studied, their organic counterparts provide an opportunity to develop solution-processable, flexible, lightweight, and wearable electronic devices. However, there is a rare choice of solution-processable, flexible, lightweight magnetoelectric materials which has tremendous technological interest.
View Article and Find Full Text PDFACS Appl Mater Interfaces
September 2024
State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, P. R. China.
The latest synthesized monolayer (ML) MoSiN material exhibits stability in ambient conditions, suitable bandgap, and high mobilities. Its potential as a next-generation transistor channel material has been demonstrated through quantum transport simulations. However, in practical two-dimensional (2D) material transistors, the electrical contacts formed by the channel and the electrode must be optimized, as they are crucial for determining the efficiency of carrier injection.
View Article and Find Full Text PDFEnter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!