AI Article Synopsis
- Atom probe tomography and transmission electron microscopy reveal that Bi distribution in InPBi is non-uniform, varying with the growth direction and within the film.
- A high concentration of Bi is found at the bottom of the InPBi layer near the InP interface, with distinct V-shaped and quasi-periodic Bi-rich nanowalls located at specific planes.
- A proposed growth model accounts for these Bi nanostructures, which notably influence the optical properties and deep levels of the InPBi epilayer.
Article Abstract
The nanoscale distribution of Bi in InPBi is determined by atom probe tomography and transmission electron microscopy. The distribution of Bi atoms is not uniform both along the growth direction and within the film plane. A statistically high Bi-content region is observed at the bottom of the InPBi layer close to the InPBi/InP interface. Bi-rich V-shaped walls on the (-111) and (1-11) planes close to the InPBi/InP interface and quasi-periodic Bi-rich nanowalls in the (1-10) plane with a periodicity of about 100 nm are observed. A growth model is proposed to explain the formation of these unique Bi-related nanoscale features. These features can significantly affect the deep levels of the InPBi epilayer. The regions in the InPBi layer with or without these Bi-related nanostructures exhibit different optical properties.
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Source |
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| http://www.ncbi.nlm.nih.gov/pmc/articles/PMC5612989 | PMC |
| http://dx.doi.org/10.1038/s41598-017-12075-2 | DOI Listing |
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