AI Article Synopsis
- A new high-sensitivity lock-in pixel CMOS image sensor (CIS) has been developed, featuring a large full well capacity (FWC) for improved signal detection and low temporal random noise.
- The sensor utilizes a lateral electric field charge modulator (LEFM) for rapid charge transfer from the photodiode to in-pixel storage diodes (SDs), achieving a significant SD-FWC of about 7ke- and low noise levels of 1.2e-rms at 20 fps.
- Fabricated using Dongbu HiTek's 1P4M 0.11 CIS process, the imager also boasts a fast intrinsic response of less than 500 ps at a wavelength of 635
Article Abstract
A large full well capacity (FWC) for wide signal detection range and low temporal random noise for high sensitivity lock-in pixel CMOS image sensor (CIS) embedded with two in-pixel storage diodes (SDs) has been developed and presented in this paper. For fast charge transfer from photodiode to SDs, a lateral electric field charge modulator (LEFM) is used for the developed lock-in pixel. As a result, the time-resolved CIS achieves a very large SD-FWC of approximately 7ke-, low temporal random noise of 1.2e-rms at 20 fps with true correlated double sampling operation and fast intrinsic response less than 500 ps at 635 nm. The proposed imager has an effective pixel array of and a pixel size of . The sensor chip is fabricated by Dongbu HiTek 1P4M 0.11 CIS process.
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| http://dx.doi.org/10.1109/TBCAS.2017.2738322 | DOI Listing |
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