Highly Enhanced TMR Ratio and Δ for Double MgO-based p-MTJ Spin-Valves with Top CoFeB Free Layer by Nanoscale-thick Iron Diffusion-barrier.

Sci Rep

MRAM Center, Department of Electronics and Computer Engineering, Hanyang University, Seoul, 04763, Republic of Korea.

Published: September 2017

For double MgO-based p-MTJ spin-valves with a top CoFeB free layer ex-situ annealed at 400 °C, the insertion of a nanoscale-thickness Fe diffusion barrier between the tungsten (W) capping layer and MgO capping layer improved the face-centered-cubic (f.c.c.) crystallinity of both the MgO capping layer and tunneling barrier by dramatically reducing diffusion of W atoms from the W capping layer into the MgO capping layer and tunneling barrier, thereby enhancing the TMR ratio and thermal stability (Δ). In particular, the TMR ratio was extremely sensitive to the thickness of the Fe barrier; it peaked (154%) at about 0.3 nm (the thickness of only two atomic Fe layers). The effect of the diffusion barrier originated from interface strain.

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Source
http://www.ncbi.nlm.nih.gov/pmc/articles/PMC5605541PMC
http://dx.doi.org/10.1038/s41598-017-10967-xDOI Listing

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