Considering the sizable band gap and wide spectrum response of tin disulfide (SnS ), ultrathin SnS nanosheets are utilized as solar-driven photocatalyst for water splitting. Designing a heterostructure based on SnS is believed to boost their catalytic performance. Unfortunately, it has been quite challenging to explore a material with suitable band alignment using SnS nanomaterials for photocatalytic hydrogen generation. Herein, a new strategy is used to systematically tailor the band alignment in SnS based heterostructure to realize efficient H production under sunlight. A Type-I to Type-II band alignment transition is demonstrated via introducing an interlayer of Ce S , a potential photocatalyst for H evolution, between SnS and CeO . Subsequently, this heterostructure demonstrates tunability in light absorption, charge transfer kinetics, and material stability. The optimized heterostructure (SnS -Ce S -CeO ) exhibits an incredibly strong light absorption ranging from deep UV to infrared light. Significantly, it also shows superior hydrogen generation with the rate of 240 µmol g h under the illumination of simulated sunlight with a very good stability.
Download full-text PDF |
Source |
|---|---|
| http://dx.doi.org/10.1002/smll.201702163 | DOI Listing |
Publication Analysis
Top Keywords
Similar Publications
Application of advanced quantum dots in perovskite solar cells: synthesis, characterization, mechanism, and performance enhancement.
Mater Horiz
January 2025
Dalian National Laboratory for Clean Energy, iChEM, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, 457 Zhongshan Road, Dalian 116023, China.
Quantum dots have garnered significant interest in perovskite solar cells (PSCs) due to their stable chemical properties, high carrier mobility, and unique features such as multiple exciton generation and excellent optoelectronic characteristics resulting from quantum confinement effects. This review explores quantum dot properties and their applications in photoelectronic devices, including their synthesis and deposition processes. This sets the stage for discussing their diverse roles in the carrier transport, absorber, and interfacial layers of PSCs.
View Article and Find Full Text PDFLow-Frequency Resistance Noise in Near-Magic-Angle Twisted Bilayer Graphene.
ACS Nano
January 2025
Department of Physics, Indian Institute of Science, Bangalore 560012, India.
The low-frequency resistance fluctuations, or noise, in electrical resistance not only set a performance benchmark in devices but also form a sensitive tool to probe nontrivial electronic phases and band structures in solids. Here, we report the measurement of such noise in the electrical resistance in twisted bilayer graphene (tBLG), where the layers are misoriented close to the magic angle (θ ∼ 1°). At high temperatures ( ≳ 60-70 K), the power spectral density (PSD) of the fluctuation inside the low-energy moiré bands is predominantly ∝1/, where is the frequency, being generally lowest close to the magic angle, and can be well-explained within the conventional McWhorter model of the '1/ noise' with trap-assisted density-mobility fluctuations.
View Article and Find Full Text PDFMicrowave-assisted synthesis of highly photoluminescent core/shell CuInZnSe/ZnS quantum dots as photovoltaic absorbers.
Nanoscale Adv
January 2025
Université de Lorraine, CNRS, LRGP F-54000 Nancy France
Water-dispersible core/shell CuInZnSe/ZnS (CIZSe/ZnS) quantum dots (QDs) were efficiently synthesized under microwave irradiation using -acetylcysteine (NAC) and sodium citrate as capping agents. The photoluminescence (PL) emission of CIZSe/ZnS QDs can be tuned from 593 to 733 nm with varying the Zn : Cu molar ratio in the CIZSe core. CIZSe/ZnS QDs prepared with a Zn : Cu ratio of 0.
View Article and Find Full Text PDFModification of the Se/MoO Rear Interface for Efficient Wide-Band-Gap Trigonal Selenium Solar Cells.
ACS Appl Mater Interfaces
January 2025
Institute of New Energy Technology, College of Physics & Optoelectronic Engineering, Jinan University, Guangzhou 510632, China.
Trigonal selenium (t-Se) is a promising wide-band-gap photovoltaic material with a high absorption coefficient, abundant resources, simple composition, nontoxicity, and a low melting point, making it suitable for absorbers in advanced indoor and tandem photovoltaic applications. However, severe electrical losses at the rear interface of the t-Se absorber, caused by work function and lattice mismatches, limit the voltage output and overall performance. In this study, a strategy to enhance carrier transport and collection by modifying interfacial chemical interactions is proposed.
View Article and Find Full Text PDFIn-Plane Transition-Metal Dichalcogenide Junction with Nearly Zero Interfacial Band Offset.
ACS Nano
January 2025
Center for Interdisciplinary Science of Optical Quantum and NEMS Integration, School of Physics, Advanced Research Institute of Multidisciplinary Science, and School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing 100081, China.
Two-dimensional in-plane transition-metal dichalcogenide (TMD) junctions have a range of potential applications in next-generation electronic devices. However, limited by the difficulties in ion implantation on 2D systems, the fabrication of the in-plane TMD junctions still relies on the lateral epitaxy of different materials, which always induces lattice mismatch and interfacial scattering. Here, we report the in-plane TMD junction formed with monolayer (ML) PtTe at the boundary of ML and bilayer graphene on SiC.
View Article and Find Full Text PDFWant AI Summaries of new PubMed Abstracts delivered to your In-box?
Enter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!