Electrocaloric (EC) materials show promise in eco-friendly solid-state refrigeration and integrable on-chip thermal management. While direct measurement of EC thin-films still remains challenging, a generic theoretical framework for quantifying the cooling properties of rich EC materials including normal-, relaxor-, organic- and anti-ferroelectrics is imperative for exploiting new flexible and room-temperature cooling alternatives. Here, we present a versatile theory that combines Master equation with Maxwell relations and analytically relates the macroscopic cooling responses in EC materials with the intrinsic diffuseness of phase transitions and correlation characteristics. Under increased electric fields, both EC entropy and adiabatic temperature changes increase quadratically initially, followed by further linear growth and eventual gradual saturation. The upper bound of entropy change (∆S) is limited by distinct correlation volumes (V ) and transition diffuseness. The linearity between V and the transition diffuseness is emphasized, while ∆S = 300 kJ/(K.m) is obtained for PbBaZrO. The ∆S in antiferroelectric PbZrTiO, PbBaZrO and polymeric ferroelectrics scales proportionally with V , owing to the one-dimensional structural constraint on lattice-scale depolarization dynamics; whereas ∆S in relaxor and normal ferroelectrics scales as ∆S ~ V , which tallies with a dipolar interaction exponent of 2/3 in EC materials and the well-proven fractional dimensionality of 2.5 for ferroelectric domain walls.
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http://dx.doi.org/10.1038/s41598-017-11633-y | DOI Listing |
Inorg Chem
December 2024
Key Laboratory of Materials Physics, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei 230031, People's Republic of China.
RSC Adv
August 2019
Laboratoire des Matériaux Multifonctionnels et Applications, Faculté des Sciences de Sfax (FSS), Université de Sfax B. P.1171 3018 Sfax Tunisia.
In this paper, the synthesis of CaNaTiNbO (CNTN) ceramic by a solid-state reaction method is reported. The results of Rietveld refinement of X-ray diffraction (XRD) patterns at room temperature showed a pure tetragonal perovskite (4 space group). Raman spectroscopy analysis, ranging from of 50 to 1000 cm, at room temperature, validates the results of XRD.
View Article and Find Full Text PDFRSC Adv
January 2019
Laboratoire de Sciences et Génie des Matériaux, Faculté de Génie Mécanique et Génie des Procédés, Université des Sciences et de la Technologie Houari Boumediene BP32 Bab Ezzouar 16111 Alger Algeria.
In the present work, structural and dielectrics properties of polycrystalline sample BaBiTiZrNbO (BBTZN) prepared by a molten-salt method were investigated. X-ray diffraction analyses revealed the formation of a single-phase pseudocubic structure with a 3̄ space group. Unlike the trend observed in classic ferroelectrics, the temperature dependence of the dielectric constants showed the presence of three sequences of structural phase transitions.
View Article and Find Full Text PDFRSC Adv
July 2018
Discipline of Metallurgy Engineering and Materials Science, Indian Institute of Technology Indore Simrol 453552 India +91-7324306-685.
Lead-free ceramics based on the (1 - )KNaNbO-Bi(ZnTi)O (KNN-BZT) system obtained the conventional solid-state processing technique were characterized for their crystal structure, microstructure, and electrical properties. Rietveld analysis of X-ray diffraction data confirmed the formation of a stable perovskite phase for Bi(ZnTi)O substitutions up to 30 mol%. The crystal structure was found to transform from orthorhombic 2 to cubic 3̄ through mixed rhombohedral and tetragonal phases with the increase in Bi(ZnTi)O content.
View Article and Find Full Text PDFJ Chem Theory Comput
February 2018
Department of Chemical Engineering and ‡Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States.
Approximate density functional theory (DFT) is widely used in chemistry and physics, despite delocalization errors that affect energetic and density properties. DFT+U (i.e.
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