We report a surface X-ray diffraction study of the crystalline structure changes and critical behavior across the (3√2 × √2)R45° → (√2 × √2)R45° surface phase transition at 360 K for 0.5 monolayers of Sn on Cu(100). The phase transition is of the order-disorder type and is due to the disordering of the Cu atomic vacancies present in the low temperature phase. Two different atomic sites for Sn atoms, characterized by two different heights, are maintained across the surface phase transition.
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http://dx.doi.org/10.1021/acs.jpcb.7b06398 | DOI Listing |
J Phys Chem A
January 2025
Department of Chemistry and Shanghai Key Laboratory of Molecular Catalysis and Innovative Materials, Collaborative Innovation Center of Chemistry for Energy Materials (iChEM), Fudan University, Shanghai 200438, China.
Understanding the interactions between transition metal atoms and molecules is important for the study of various related chemical and physical processes. In this study, we have investigated collisions between iron (Fe), iridium (Ir), and platinum (Pt) and the small molecules CH, O, and CO using a crossed-beam and time-sliced ion velocity map imaging technique. Elastic collisions were observed in all cases, except for collisions of Pt with O and CO.
View Article and Find Full Text PDFSmall
January 2025
State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China.
PbZrO (PZO) thin films, as a classic antiferroelectric material, have attracted tremendous attention for their excellent dielectric, electromechanical, and thermal switching performances. However, several fundamental questions remain unresolved, particularly the existence of an intermediate phase during the transition from the antiferroelectric (AFE) to ferroelectric (FE) state. Here, a phase coexistence configuration of an orthorhombic AFE phase and a tetragonal-like (T-like) phase is reported in epitaxial antiferroelectric PZO thin films, with thickness ranging from 16 to 110 nm.
View Article and Find Full Text PDFJ Acoust Soc Am
January 2025
Jianglu Mechanical Electrical Group Company Limited, Xiangtan 411105, China.
Topological acoustic waveguides have a potential for applications in the precise transmission of sound. Currently, there is more attention to multi-band in this field. However, achieving tunability of the operating band is also of great significance.
View Article and Find Full Text PDFPhys Chem Chem Phys
January 2025
College of Physics, Sichuan University, Chengdu, 610065, China.
Magnetic semiconductors with spin-polarized non-metallic atoms are usually overlooked in applications because of their poor performances in magnetic moments and under critical temperatures. Herein, magnetic characteristics of 2D pentagon-based XN (X = B, Al, and Ga) are revealed based on first-principles calculations. It was proven that XN structures are antiferromagnetic semiconductors with bandgaps of 2.
View Article and Find Full Text PDFDalton Trans
January 2025
Graduate School of Engineering and Science, Shibaura Institute of Technology, 307 Fukasaku, Minuma, Saitama, 337-8570, Japan.
We successfully synthesized perovskite-type RbTaO at 1173 K under 4 GPa. RbTaO crystalized as a cubic system (3̄ space group (SG), = 4.04108(3) Å) at 300 K in contrast to the orthorhombic perovskite-type RbNbO prepared under the same conditions.
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