Active Control of Charge Density Waves at Degenerate Semiconductor Interfaces.

We present an optoelectronic switch for functional plasmonic circuits based on active control of Surface Plasmon Polaritons (SPPs) at degenerate PN-junction interfaces. Self-consistent multi-physics simulations of the electromagnetic, thermal and IV characteristics of the device have been performed. The lattice matched Indium Gallium Arsenide (InGaAs) is identified as a better semiconductor material compared to Si for the practical implementation of the proposed optoelectronic switch providing higher optical confinement, reduced size and faster operation. The optimal device is shown to operate at signal modulation surpassing -100 dB, responsivity in excess of -600 dB·V and switching rates up to 50 GHz, thus potentially providing a new pathway toward bridging the gap between electronic and photonic devices.