Tin monosulfide (SnS) nanostructures have attracted huge attention recently because of their high absorption coefficient, high photoconversion efficiencies, low energy cost, ease of deposition, and so on. Here, in this paper, we report on the low-cost hydrothermal synthesis of the self-assembled SnS nanoflake-like structures in terms of performance for the photodetectors. High-performance photodetectors were fabricated using SnS nanoflakes as active layers and graphene as the lateral electrodes. The SnS photodetectors exhibited excellent photoresponse properties with a high responsivity of 1.7 × 10 A/W and have fast response and recovery times. In addition, the photodetectors exhibited long-term stability and strong dependence of photocurrent on light intensity. These excellent characteristics were attributed to the larger surface-to-volume ratio of the self-assembled SnS nanoflakes and the effective separation of the photogenerated carriers at graphene/SnS interfaces. Additionally, a flexible photodetector based on SnS nanoflakes was also fabricated on a flexible substrate that demonstrated similar photosensitive properties. Furthermore, this study also demonstrates the potential of hydrothermal-processed SnS nanoflakes for high-performance photodetectors and their application in flexible low-cost optoelectronic devices.
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http://dx.doi.org/10.1021/acsami.7b09959 | DOI Listing |
J Colloid Interface Sci
June 2024
School of Materials Science and Engineering, Institute of Material Physics, Key Laboratory of Display Materials and Photoelectric Devices, Ministry of Education, and Tianjin Key Laboratory for Photoelectric Materials and Devices, Tianjin University of Technology, Tianjin 300384, China.
J Colloid Interface Sci
November 2023
College of Architecture and Environment, Sichuan University, Chengdu 610065, China. Electronic address:
Constructing pseudocapacitive electrodes with high specific capacities is indispensable for increasing the large-scale application of capacitive deionization (CDI). However, the insufficient CDI rate and cycling performance of pseudocapacitive-based electrodes have led to a decline in their use due to the corresponding volumetric expansion and contraction that occurs during long-term CDI processes. Herein, hierarchical porous SnS nanoflakes are encapsulated inside an N-doped carbon (NC) matrix to achieve efficient CDI.
View Article and Find Full Text PDFAdv Sci (Weinh)
June 2023
Electronic Materials Research Center, Korea Institute of Science and Technology (KIST), Seoul, 02791, Republic of Korea.
2D transition metal dichalcogenides (TMDs) have significant research interests in various novel applications due to their intriguing physicochemical properties. Notably, one of the 2D TMDs, SnS , has superior chemiresistive sensing properties, including a planar crystal structure, a large surface-to-volume ratio, and a low electronic noise. However, the long-term stability of SnS in humid conditions remains a critical shortcoming towards a significant degradation of sensitivity.
View Article and Find Full Text PDFACS Sens
March 2023
Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States.
Two important methods for enhancing gas sensing performance are vacancy/defect and interlayer engineering. Tin sulfide (SnS) has recently attracted much attention for sensing of the NO gas due to its active surface sites and tunable electronic structure. Herein, SnS has been synthesized by the chemical vapor deposition (CVD) method followed by nitrogen plasma treatment with different exposure times for fast detection of NO molecules.
View Article and Find Full Text PDFNanomaterials (Basel)
December 2022
Department of Physics, Shanghai University, Shanghai 200444, China.
By employing optical pump Terahertz (THz) probe spectroscopy, ultrafast photocarrier dynamics of a two-dimensional (2D) semiconductor, SnS nanoflake film, has been investigated systematically at room temperature. The dynamics of photoexcitation is strongly related to the density of edge sites and defects in the SnS nanoflakes, which is controllable by adjusting the height of vertically aligned SnS during chemical vapor deposition growth. After photoexcitation at 400 nm, the transient THz photoconductivity response of the films can be well fitted with bi-exponential decay function.
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