AI Article Synopsis
- The study compared two methods of annealing—a standard forming gas annealing at 0.04 bar pressure and a high-pressure hydrogen annealing (H-HPA) at 30 bar—on HfO/AlO gate stacks on InGaAs substrates.
- It was found that higher hydrogen pressure led to more significant out-diffusion of Indium and Gallium, which improved the electrical properties of the device but also increased leakage current.
- The effects were particularly notable on p-type InGaAs substrates, enhancing capacitance-voltage characteristics while complicating the interface with increased current leakage.
Article Abstract
We studied the impact of H pressure during post-metallization annealing on the chemical composition of a HfO/AlO gate stack on a HCl wet-cleaned InGaAs substrate by comparing the forming gas annealing (at atmospheric pressure with a H partial pressure of 0.04 bar) and H high-pressure annealing (H-HPA at 30 bar) methods. In addition, the effectiveness of H-HPA on the passivation of the interface states was compared for both p- and n-type InGaAs substrates. The decomposition of the interface oxide and the subsequent out-diffusion of In and Ga atoms toward the high-k film became more significant with increasing H pressure. Moreover, the increase in the H pressure significantly improved the capacitance‒voltage characteristics, and its effect was more pronounced on the p-type InGaAs substrate. However, the H-HPA induced an increase in the leakage current, probably because of the out-diffusion and incorporation of In/Ga atoms within the high-k stack.
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| http://www.ncbi.nlm.nih.gov/pmc/articles/PMC5575061 | PMC |
| http://dx.doi.org/10.1038/s41598-017-09888-6 | DOI Listing |
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