AI Article Synopsis
- The study uses finite element simulations to analyze the ON state characteristics of VO-based threshold switching devices, focusing on thermally induced switching and filament growth.
- Results from the simulations align well with experimental data, particularly in depicting the I-V characteristics.
- The research also compares these characteristics across two VO films with varying electrical conductivities and contrasts them with layers made of TaO and NbO.
Article Abstract
We report the results of finite element simulations of the ON state characteristic of VO-based threshold switching devices and compare the results with experimental data. The model is based on thermally induced threshold switching (thermal runaway) and successfully reproduces the I-V characteristics showing the formation and growth of the conductive filament in the ON state. Furthermore, we compare the I-V characteristics for two VO films with different electrical conductivities in the insulating and metallic phases as well as those based on TaO and NbO functional layers.
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| http://dx.doi.org/10.1088/1361-6528/aa882f | DOI Listing |
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