AI Article Synopsis
- The study used transmission electron microscopy to evaluate titanium oxide (TiO2) contacts in n-type silicon solar cells.
- The high cell efficiency of 21.6% was linked to strong surface passivation in the SiO2/TiO2/Al rear contacts and low contact resistivity at the heterojunction, thanks to the conversion of amorphous TiO2 to a conductive TiO2-x phase.
- In contrast, a lower efficiency of 9.8% was observed with a-Si:H/TiO2/Al contacts, attributed to the loss of passivation in a-Si:H after annealing.
Article Abstract
In this study, the cross-section of electron-selective titanium oxide (TiO2) contacts for n-type crystalline silicon solar cells were investigated by transmission electron microscopy. It was revealed that the excellent cell efficiency of 21.6% obtained on n-type cells, featuring SiO2/TiO2/Al rear contacts and after forming gas annealing (FGA) at 350°C, is due to strong surface passivation of SiO2/TiO2 stack as well as low contact resistivity at the Si/SiO2/TiO2 heterojunction. This can be attributed to the transformation of amorphous TiO2 to a conducting TiO2-x phase. Conversely, the low efficiency (9.8%) obtained on cells featuring an a-Si:H/TiO2/Al rear contact is due to severe degradation of passivation of the a-Si:H upon FGA.
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| http://dx.doi.org/10.1017/S1431927617012417 | DOI Listing |
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