Atom probe tomography (APT) data acquired from a CAMECA LEAP 4000 XHR for the CdS/CdTe interface for a non-CdCl treated CdTe solar cell as well as the mass spectrum of an APT data set including a GB in a CdCl-treated CdTe solar cell are presented. Scanning electron microscopy (SEM) data showing the evolution of sample preparation for APT and scanning transmission electron microscopy (STEM) electron beam induced current (EBIC) are also presented. These data show mass spectrometry peak decomposition of Cu and Te within an APT dataset, the CdS/CdTe interface of an untreated CdTe solar cell, preparation of APT needles from the CdS/CdTe interface in superstrate grown CdTe solar cells, and the preparation of a cross-sectional STEM EBIC sample.
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http://dx.doi.org/10.1016/j.dib.2016.03.042 | DOI Listing |
ACS Appl Mater Interfaces
January 2025
National Renewable Energy Lab, Golden, Colorado 80401, United States.
Cd(Se,Te) photovoltaics (PV) are the most widely deployed thin-film solar technology globally, yet continued efficiency improvements are stymied by challenges at the device hole contacts. The inclusion of solution-processed oxide layers such as AlGaO in the contact stack has yielded improved device open-circuit voltages () and fill factors (FF). However, contradictory mechanisms by which these layers improve the device properties have been proposed by the research community.
View Article and Find Full Text PDFACS Appl Mater Interfaces
January 2025
National Renewable Energy Laboratory, Golden, Colorado 80401, United States.
Optimizing group-V doping and Se alloying are two main focuses for advancing CdTe photovoltaic technology. We report on nanometer-scale characterizations of microelectronic structures of phosphorus (P)-doped CdSeTe devices using a combination of two atomic force microscopy-based techniques, namely, Kelvin probe force microscopy (KPFM) and scanning spreading resistance microscopy (SSRM). KPFM on device cross-section images distribution of the potential drop across the device.
View Article and Find Full Text PDFJ Chem Phys
December 2024
Advanced Membranes and Porous Materials Center, Division of Physical Science and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Kingdom of Saudi Arabia.
Precise material design and surface engineering play a crucial role in enhancing the performance of optoelectronic devices. These efforts are undertaken to particularly control the optoelectronic properties and regulate charge carrier dynamics at the surface and interface. In this study, we used ultrafast scanning electron microscopy (USEM), which is a powerful and highly sensitive surface tool that provides unique information about the photoactive charge dynamics of material surfaces selectively and spontaneously in real time and space in high spatial and temporal resolution.
View Article and Find Full Text PDFHeliyon
November 2024
North South University, Dhaka, 1229, Bangladesh.
ACS Mater Au
November 2024
School of Materials Engineering, Purdue University, West Lafayette, Indiana 47907, United States.
Ion migration in semiconductor devices is facilitated by the presence of point defects and has a major influence on electronic and optical properties. It is important to understand and identify ways to mitigate photoinduced and electrically induced defect-mediated ion migration in semiconductors. In this Perspective, we discuss the fundamental mechanisms of defect-mediated ion migration and diffusion as understood through atomistic simulations.
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