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Capacitive Behavior of Single Gallium Oxide Nanobelt. | LitMetric
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Capacitive Behavior of Single Gallium Oxide Nanobelt.

Haitao Cai Hang Liu Huichao Zhu Pai Shao Changmin Hou

Materials (Basel)

State Key Laboratory of Inorganic Synthesis and Preparative Chemistry, College of Chemistry, Jilin University, Changchun 130012, China.

Published: August 2015

In this research, monocrystalline gallium oxide (Ga₂O₃) nanobelts were synthesized through oxidation of metal gallium at high temperature. An electronic device, based on an individual Ga₂O₃ nanobelt on Pt interdigital electrodes (IDEs), was fabricated to investigate the electrical characteristics of the Ga2O3 nanobelt in a dry atmosphere at room temperature. The current-voltage (I-V) and I/V-t characteristics show the capacitive behavior of the Ga₂O₃ nanobelt, indicating the existence of capacitive elements in the Pt/Ga₂O₃/Pt structure.

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 Source
http://www.ncbi.nlm.nih.gov/pmc/articles/PMC5455499PMC
http://dx.doi.org/10.3390/ma8085244DOI Listing

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