The influence of BC incorporation during magnetron sputter deposition of Cr/Sc multilayers intended for soft X-ray reflective optics is investigated. Chemical analysis suggests formation of metal: boride and carbide bonds which stabilize an amorphous layer structure, resulting in smoother interfaces and an increased reflectivity. A near-normal incidence reflectivity of 11.7%, corresponding to a 67% increase, is achieved at λ = 3.11 nm upon adding 23 at.% (B + C). The advantage is significant for the multilayer periods larger than 1.8 nm, where amorphization results in smaller interface widths, for example, giving 36% reflectance and 99.89% degree of polarization near Brewster angle for a multilayer polarizer. The modulated ion-energy-assistance during the growth is considered vital to avoid intermixing during the interface formation even when B + C are added.
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http://dx.doi.org/10.1364/OE.25.018274 | DOI Listing |
Nanomaterials (Basel)
September 2024
Instituto de Ciencia de Materiales de Madrid, Consejo Superior de Investigaciones Científicas, Cantoblanco, 28049 Madrid, Spain.
Thin films of silver-doped zinc oxide (SZO) were deposited at room temperature using a DC reactive magnetron co-sputtering technique using two independent Zn and Ag targets. The crystallographic structure, chemical composition and surface morphology of SZO films with different silver concentrations were correlated with the photocatalytic (PC) properties. The crystallization of the SZO films was made using millisecond range flash-lamp-annealing (FLA) treatments.
View Article and Find Full Text PDFRSC Adv
April 2023
Materials Science and Nanotechnology Department, Faculty of Postgraduate Studies for Advanced Sciences, Beni-Suef University Beni-Suef 62511 Egypt
The efficient electrocatalysts for direct methanol oxidation play an essential role in the electrochemical energy conversion systems for their application in a wide range of portable applications. Consequently, Cu-doped NiO thin films on fluorine-doped tin oxide (FTO) were successfully prepared by the co-sputtering deposition technique, using various deposition times (300, 600, 900, and 1200 seconds), and producing films of different thicknesses (30, 55, 90, and 120 nm, respectively). X-ray diffraction (XRD) revealed the ideal crystallinity of the structure of the prepared films and was used to observe the effect of the thickness of the films on the crystal size.
View Article and Find Full Text PDFHeliyon
February 2020
Universidad Nacional de Colombia - Bogotá, Department of Physics, Grupo de Materiales Nanoestructurados y sus Aplicaciones, Cra. 30 No. 45-03 Edificio 404 Yu Takeuchi Lab. 121C / 121B-1 Ciudad Universitaria - Bogotá, 11001, Colombia.
TiO:Co thin films on ITO (Indium-tin-oxide)/PET (Poly Ethylene Terephthalate) flexible and glass substrates were fabricated via DC magnetron co-sputtering at room temperature. The samples deposited on glass substrates were subjected to annealing processes at 473 K for 2 h to improve the crystallization of the material. Both TiO:Co/ITO/PET and TiO:Co/glass thin films exhibited excellent optical properties with more than 80% transmission in the visible region.
View Article and Find Full Text PDFMaterials (Basel)
March 2019
Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 701, Taiwan.
In this study, amorphous indium gallium oxide thin-film transistors (IGO TFTs) were fabricated by co-sputtering. Three samples with different deposition powers of the In₂O₃ target, namely, sample A with 50 W deposition power, sample B with 60 W deposition power, and sample C with 70 W deposition power, were investigated. The device performance revealed that oxygen vacancies are strongly dependent on indium content.
View Article and Find Full Text PDFRSC Adv
October 2018
School of Electronic and Information Engineering, South China University of Technology Guangzhou China
Indium-tin-zinc-oxide (ITZO) as the channel layer grown by co-sputtering of ZnO target and ITO target in the bottom gate thin-film transistors (TFTs) is proposed in this work. The microstructure and optical properties of ITZO thin films at different annealing temperatures were analyzed. The impact of various annealing temperatures on the ITZO TFT performance characteristics was systematically investigated as well.
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