A Mach-Zehnder interferometer (MZI) that includes in an arm either a reflective image inverter or a Gouy phase shifter (RGPS) can (de)multiplex many types of modes of a few mode fiber without fundamental loss. The use of RGPSs in combination with binary phase plates for multiplexing purposes is studied for the first time, showing that the particular RGPS that shifts π the odd modes only multiplexes accurately low order modes. To overcome such a restriction, we present a new exact refractive image inverter, more compact and flexible than its reflective counterpart. Moreover, we show that these interferometers remove or reduce the crosstalk that the binary phase plates could introduce between the multiplexed modes. Finally, an experimental analysis of a MZI with both an approximated and an exact refractive image inverter is presented for the case of a bimodal multiplexing. Likewise, it is proven experimentally that a RGPS that shifts π/2 demultiplexes two odd modes which can not be achieved by any image inverter.
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Sci Rep
January 2025
Department of Electrical Engineering, Faculty of Engineering, Razi University, Kermanshah, Iran.
Climate change is one of the most crucial issues in human society such that if it is not given sufficient attention, it can become a great threat to both humans and the Earth. Due to global warming, soil erosion is increasing in different regions. Therefore, this issue will require further investigation and the use of new tools.
View Article and Find Full Text PDFSci Adv
October 2024
Guangzhou Key Laboratory of Flexible Electronic Materials and Wearable Devices, Key Laboratory for Polymeric Composite and Functional Materials of Ministry of Education, School of Materials Science and Engineering, State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China.
Organic electrochemical transistor (OECT)-based inverter introduces new prospects for energy-efficient brain-inspired artificial intelligence devices. Here, we report single-component OECT-based inverters by incorporating ambipolar p(gDPP-V). Notably, p(gDPP-V) shows state-of-the-art ambipolar OECT performances in both conventional (p/n-type mode transconductance of 29/25 S cm) and vertical (transconductance of 297.
View Article and Find Full Text PDFACS Appl Mater Interfaces
August 2024
School of Microelectronics, Fudan University, Shanghai 200433, China.
The unique features of two-dimensional (2D) materials provide significant opportunities for the development of transparent and flexible electronics. Recently, ambipolar 2D semiconductors have advanced innovative applications such as CMOS-like circuits, reconfigurable circuits, and ultrafast neuromorphic image sensors. Here, we report on the fabrication of full 2D ambipolar field-effect transistors (FETs), in which graphene serves as the source/drain/gate electrodes, WSe is for the channel, and h-BN is for the dielectric.
View Article and Find Full Text PDFRev Sci Instrum
July 2024
Department of Physics, FFCLRP, University of São Paulo, Ribeirão Preto, São Paulo 14040-901, Brazil.
Magnetomotive ultrasound (MMUS) stands out as a promising and effective ultrasound-based method for detecting magnetic nanoparticles (MNPs) within tissues. This innovative technique relies on the precise estimation of micrometric displacements induced by the interaction of an external magnetic field with MNPs. Pulsed MMUS has emerged as a strategic alternative to address limitations associated with harmonic excitation, such as heat generation in amplifiers and coils, frequency-dependent tissue mechanical responses, and prolonged magnetic field rise times.
View Article and Find Full Text PDFNano Lett
June 2024
Key Laboratory of Semiconductor Display Materials and Chips, Printable Electronics Research Center, Division of Nanodevices and Related Nanomaterials, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, No. 398 Ruoshui Road, SEID, Suzhou Industrial Park, Suzhou 215123, China.
Radiation-tolerance and repairable flexible transistors and integrated circuits (ICs) with low power consumption have become hot topics due to their wide applications in outer space, nuclear power plants, and X-ray imaging. Here, we designed and developed novel flexible semiconducting single-walled carbon nanotube (sc-SWCNT) thin-film transistors (TFTs) and ICs. Sc-SWCNT solid-electrolyte-gate dielectric (SEGD) TFTs showcase symmetric ambipolar characteristics with flat-band voltages (V) of ∼0 V, high I/I ratios (>10), and the recorded irradiation resistance (up to 22 Mrad).
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