A continuous-wave 1.6 µm-emitting InAs Quantum Dash-based Optically-Pumped Vertical-External-Cavity Surface-Emitting Laser on InP is demonstrated. The laser emits in the L-band with a stable linear polarization. Up to 163 mW output power has been obtained in multi-transverse mode regime. Single-frequency regime is achieved in the 1609-1622 nm range, with an estimated linewidth of 22 kHz in a 49 mm cavity, and a maximum emitted power of 7.9 mW at 1611 nm. In such conditions, the laser exhibits a Class-A behavior, with a cut-off frequency of 800 kHz and a shot-noise floor of -158 dB/Hz for 2 mA of detected photocurrent.
Download full-text PDF |
Source |
|---|---|
| http://dx.doi.org/10.1364/OE.25.011760 | DOI Listing |
Publication Analysis
Top Keywords
Similar Publications
Chip-scale optical frequency comb sources are ideal compact solutions to generate high speed optical pulses for applications in wavelength division multiplexing (WDM) and high-speed optical signal processing. Our previous studies have concentrated on the use of quantum dash based lasers, but here we present results from an InAs/InP quantum dot (QDot) C-band passively mode-locked laser (MLL) for frequency comb generation. By using this single-section QDot-MLL we demonstrate an aggregate line rate of 12.
View Article and Find Full Text PDFA continuous-wave 1.6 µm-emitting InAs Quantum Dash-based Optically-Pumped Vertical-External-Cavity Surface-Emitting Laser on InP is demonstrated. The laser emits in the L-band with a stable linear polarization.
View Article and Find Full Text PDFWe present the first demonstration of an InAs/InP Quantum Dash based single-section frequency comb generator designed for use in photonic integrated circuits (PICs). The laser cavity is closed using a specifically designed Bragg reflector without compromising the mode-locking performance of the self pulsating laser. This enables the integration of single-section mode-locked laser in photonic integrated circuits as on-chip frequency comb generators.
View Article and Find Full Text PDFMode-locking of single-section Fabry-Pérot InAs/InP edge emitting quantum dash based lasers at 1.56 µm under continuous wave operation is studied by second-harmonic generation frequency resolved optical gating. Self-starting pulses of a width down to 374 fs can be observed after external chirp compensation using standard single-mode fiber (SMF-28).
View Article and Find Full Text PDFTiming jitter from the optical spectrum in semiconductor passively mode locked lasers.
Opt Express
April 2012
CNRS, Laboratory for Photonics and Nanostructures, Route de Nozay, 91460 Marcoussis, France.
An analysis of the passively mode locked regime in semiconductor lasers is presented, leading to an explicit expression relating the timing jitter diffusion constant to the optical linewidths in these devices. Experimental results for single section quantum-dash based lasers validating the theoretical analysis are presented for the first time. Timing jitter of mode locked lasers at rates of up to 130 GHz has been experimentally estimated from the optical spectra without requiring fast photodetection.
View Article and Find Full Text PDFWant AI Summaries of new PubMed Abstracts delivered to your In-box?
Enter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!