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Lanthanum Gadolinium Oxide: A New Electronic Device Material for CMOS Logic and Memory Devices. | LitMetric

Lanthanum Gadolinium Oxide: A New Electronic Device Material for CMOS Logic and Memory Devices.

Materials (Basel)

Department of Physics and Institute for Functional Nanomaterials, University of Puerto Rico, P.O. Box 70377, San Juan, PR 00936-8377, USA.

Published: March 2014

AI Article Synopsis

Article Abstract

A comprehensive study on the ternary dielectric, LaGdO₃, synthesized and qualified in our laboratory as a novel high-k dielectric material for logic and memory device applications in terms of its excellent features that include a high linear dielectric constant (k) of ~22 and a large energy bandgap of ~5.6 eV, resulting in sufficient electron and hole band offsets of ~2.57 eV and ~1.91 eV, respectively, on silicon, good thermal stability with Si and lower gate leakage current densities within the International Technology Roadmap for Semiconductors (ITRS) specified limits at the sub-nanometer electrical functional thickness level, which are desirable for advanced complementary metal-oxide-semiconductor (CMOS), bipolar (Bi) and BiCMOS chips applications, is presented in this review article.

Download full-text PDF

Source
http://www.ncbi.nlm.nih.gov/pmc/articles/PMC5453369PMC
http://dx.doi.org/10.3390/ma7042669DOI Listing

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