Dense and crack-free barium titanate (BaTiO₃, BTO) thin films with a thickness of less than 4 μm were prepared by using sub-micrometric scale, layer-by-layer electrohydrodynamic jet (E-jet) deposition of the suspension ink which is composed of BTO nanopowder and BTO sol. Impacts of the jet height and line-to-line pitch of the deposition on the micro-structure of BTO thin films were investigated. Results show that crack-free BTO thin films can be prepared with 4 mm jet height and 300 μm line-to-line pitch in this work. Dielectric constant of the prepared BTO thin film was recorded as high as 2940 at 1 kHz at room temperature. Meanwhile, low dissipation factor of the BTO thin film of about 8.6% at 1 kHz was also obtained. The layer-by-layer E-jet deposition technique developed in this work has been proved to be a cost-effective, flexible and easy to control approach for the preparation of high-quality solid thin film.
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http://dx.doi.org/10.3390/ma9010061 | DOI Listing |
Materials (Basel)
November 2024
Center of Physics of Minho and Porto Universities (CF-UM-UP), Laboratory for Materials and Emergent Technologies (LaPMET), Departamento de Física, Universidade do Minho, Campus de Gualtar, 4710-057 Braga, Portugal.
Laser ablation was used to successfully fabricate multiferroic bilayer thin films, composed of BaTiO (BTO) and CoFeO (CFO), on highly doped (100) Si substrates. This study investigates the influence of BaTiO layer thickness (50-220 nm) on the films' structural, magnetic, and dielectric properties. The dense, polycrystalline films exhibited a tetragonal BaTiO phase and a cubic spinel CoFeO layer.
View Article and Find Full Text PDFNanoscale
January 2025
Center for Nanoscience and Engineering, Indian Institute of Science, Bengaluru, 560012, India.
Nanomaterials (Basel)
October 2024
Institut National de la Recherche Scientifique (INRS), Centre Énergie, Matériaux et Télécommunications, 1650 Boulevard Lionel-Boulet, Varennes, QC J3X 1P7, Canada.
We report the pulsed laser deposition (PLD) of nanocrystalline/amorphous homo-composite BaTiO (BTO) films exhibiting an unprecedented combination of a colossal dielectric constant () and extremely low dielectric loss (tan ). By varying the substrate deposition temperature () over a wide range (300-800 °C), we identified = 550 °C as the optimal temperature for growing BTO films with an as high as ~3060 and a tan as low as 0.04 (at 20 kHz).
View Article and Find Full Text PDFAdv Sci (Weinh)
November 2024
Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117583, Singapore.
ACS Appl Mater Interfaces
September 2024
Department of Energy Conversion and Storage, Technical University of Denmark, Fysikvej, Building 310, 2800, Kongens Lyngby, Denmark.
Ferroionic materials combine ferroelectric properties and spontaneous polarization with ionic phenomena of fast charge recombination and electrodic functionalities. In this paper, we propose the concept of tunable polarization in CeO (ceria) thin (5 nm) films induced by built-in remnant polarization of a BaTiO (BTO) ferroelectric thin film interface, which is buried under the ceria layer. Upward and downward fixed polarizations at the BTO thin film (10 nm) are achieved by the lattice termination engineering of the SrO or TiO terminated Nb:SrTiO (NSTO or STN) substrate.
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