AI Article Synopsis
- Diverse diode characteristics were found in 2D black phosphorus and molybdenum disulfide heterojunctions, including different types of diodes like backward rectifying and Zener diodes.
- By modifying the thickness of the BP flake or using back gate modulation, various diode behaviors were observed, including a tunnel diode with negative differential resistance using a solid polymer electrolyte for dual gating.
- This research highlights efficient device architecture and processing methods, achieving a notable subthreshold swing and paving the way for future developments in low-power integrated circuits.
Article Abstract
Diverse diode characteristics were observed in two-dimensional (2D) black phosphorus (BP) and molybdenum disulfide (MoS) heterojunctions. The characteristics of a backward rectifying diode, a Zener diode, and a forward rectifying diode were obtained from the heterojunction through thickness modulation of the BP flake or back gate modulation. Moreover, a tunnel diode with a precursor to negative differential resistance can be realized by applying dual gating with a solid polymer electrolyte layer as a top gate dielectric material. Interestingly, a steep subthreshold swing of 55 mV/dec was achieved in a top-gated 2D BP-MoS junction. Our simple device architecture and chemical doping-free processing guaranteed the device quality. This work helps us understand the fundamentals of tunneling in 2D semiconductor heterostructures and shows great potential in future applications in integrated low-power circuits.
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| http://dx.doi.org/10.1021/acsnano.7b03994 | DOI Listing |
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