AI Article Synopsis
- - SiBCN ceramics were incorporated into porous Si₃N₄ ceramics using a low-pressure chemical vapor deposition technique, followed by heat treatment at temperatures between 1400 °C and 1700 °C.
- - The study examined how different annealing temperatures influenced the microstructure, phases, and dielectric properties of SiBCN ceramics.
- - Findings showed that at temperatures below 1700 °C, α-Si₃N₄ and free carbon separated, while at 1700 °C, SiC grains formed, leading to an increase in average dielectric loss from 0 to 0.03.
Article Abstract
SiBCN ceramics were introduced into porous Si₃N₄ ceramics via a low-pressure chemical vapor deposition and infiltration (LPCVD/CVI) technique, and then the composite ceramics were heat-treated from 1400 °C to 1700 °C in a N₂ atmosphere. The effects of annealing temperatures on microstructure, phase evolution, dielectric properties of SiBCN ceramics were investigated. The results revealed that α-Si₃N₄ and free carbon were separated below 1700 °C, and then SiC grains formed in the SiBCN ceramic matrix after annealing at 1700 °C through a phase-reaction between free carbon and α-Si₃N₄. The average dielectric loss of composites increased from 0 to 0.03 due to the formation of dispersive SiC grains and the increase of grain boundaries.
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| http://www.ncbi.nlm.nih.gov/pmc/articles/PMC5554036 | PMC |
| http://dx.doi.org/10.3390/ma10060655 | DOI Listing |
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