AI Article Synopsis

  • A new type of anomalous random telegraph noise (RTN) called "reversal RTN" (rRTN) has been identified in the drain current of nanoscale MOSFETs using high-k gate dielectrics.
  • The rRTN data show two distinct zones with the same amplitudes but different time constants, indicating abnormal switching behavior.
  • This behavior is best explained by a complete 4-state trap model, suggesting the presence of two metastable states in a single oxide trap, which enhances our understanding of reliability and variability in nanoscale transistors.

Article Abstract

In this paper, a new pattern of anomalous random telegraph noise (RTN), named "reversal RTN" (rRTN) induced by single oxide trap, is observed in the drain current of nanoscale metal-oxide-semiconductor field-effect transistors (MOSFETs) with high-k gate dielectrics. Under each gate voltage, the rRTN data exhibit two zones with identical amplitudes but reversal time constants. This abnormal switching behavior can be explained by the theory of complete 4-state trap model (with two stable states and two metastable states), rather than the simple 2-state or improved 3-state trap model. The results provide a direct experimental evidence of the existence of two metastable states in a single oxide trap, contributing to the comprehensive understanding of trap-related reliability and variability issues in nanoscale transistors.

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Source
http://www.ncbi.nlm.nih.gov/pmc/articles/PMC5524939PMC
http://dx.doi.org/10.1038/s41598-017-06467-7DOI Listing

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