AI Article Synopsis

  • X-ray reflectivity and transmission electron microscopy were used to study how the thickness of Ni buffer layers affects the lithiation process in Ni/NiO thin film electrodes.
  • Complete lithiation of NiO only occurs when the total bilayer thickness is under 75 Å, with thicker layers hindering lithium ion diffusion and resulting in incomplete lithiation.
  • Lithiation initiates interface-specific reactions that increase Ni layer thickness and form a low-density LiO layer, and cyclic voltammetry indicates that charge transfer resistance governs lithiation kinetics.

Article Abstract

X-ray reflectivity and transmission electron microscopy (TEM) were used to characterize the morphological changes in thin film electrodes with alternating Ni and NiO layers during lithiation as a function of the Ni buffer layer thickness. Complete lithiation of the active NiO layers occurs only when the thickness of the Ni/NiO bilayers are less than 75 Å - a threshold value that is determined by the sum of the Ni quantity in the Ni/NiO bilayer of the multilayer stack. Thicker Ni/NiO bilayers present a kinetic barrier for lithium ion diffusion inside the stack resulting in partial lithiation of the multilayer electrodes in which only the top NiO layer lithiates. Lithiation of NiO layers in a multilayer stack also leads to an interface-specific reaction that is observed to increase the thicknesses of adjacent Ni layers by 3-4 Å and is associated with the formation of a low-density LiO layer, corresponding to an interfacially-driven phase separation of the NiO. Rate dependent cyclic voltammetry studies reveal a linear relation between the peak current and scan rate suggesting that the lithiation kinetics are controlled by charge transfer resistance at the liquid-solid interface.

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http://dx.doi.org/10.1039/c7cp02448gDOI Listing

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