We have realized encapsulated trilayer MoS devices with gated graphene contacts. In the bulk, we observe an electron mobility as high as 7000 cm/(V s) at a density of 3 × 10 cm at a temperature of 1.9 K. Shubnikov-de Haas oscillations start at magnetic fields as low as 0.9 T. The observed 3-fold Landau level degeneracy can be understood based on the valley Zeeman effect. Negatively biased split gate electrodes allow us to form a channel that can be completely pinched off for sufficiently large gate voltages. The measured conductance displays plateau-like features.
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