Two-dimensional materials such as graphene offer fundamentally transformative opportunities in membrane separations and as impermeable barriers, but the lack of facile methods to assess and control its 'impermeability' critically limits progress. Here we show that a simple etch of the growth catalyst (Cu) through defects in monolayer graphene synthesized by chemical vapor deposition (CVD) can be used to effectively assess graphene quality for membrane/barrier applications. Using feedback from the method to tune synthesis, we realize graphene with nearly no nanometer-scale defects as assessed by diffusion measurements, in contrast to commercially available graphene that is largely optimized for electronic applications. Interestingly, we observe clear evidence of leakage through larger defects associated with wrinkles in graphene, which are selectively sealed to realize centimeter-scale atomically thin barriers exhibiting <2% mass transport compared to the graphene support. Our work provides a facile method to assess and control the 'impermeability' of graphene and shows that future work should be directed towards the control of leakage associated with wrinkles.
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http://dx.doi.org/10.1039/c7nr01921a | DOI Listing |
Materials (Basel)
January 2025
College of Civil Engineering, Nanjing Forestry University, Nanjing 210037, China.
The global asphalt production growth rate exceeded 10% in the past decade, and over 90% of the world's road surfaces are generated from asphalt materials. Therefore, the issue of asphalt aging has been widely researched. In this study, the aging of asphalt thin films under various natural conditions was studied to prevent the distortion of indoor simulated aging and to prevent the extraction of asphalt samples from road surfaces from impacting the aged asphalt.
View Article and Find Full Text PDFSmall
January 2025
Department of Microelectronics, Faculty of Electrical Engineering, Mathematics and Computer Science, Delft University of Technology, Delft, 2628 CN, The Netherlands.
Miniaturization of next-generation active neural implants requires novel micro-packaging solutions that can maintain their long-term coating performance in the body. This work presents two thin-film coatings and evaluates their biostability and in vivo performance over a 7-month animal study. To evaluate the coatings on representative surfaces, two silicon microchips with different surface microtopography are used.
View Article and Find Full Text PDFACS Nano
January 2025
College of Optical and Electronic Technology, China Jiliang University, 310018 Hangzhou, China.
Van der Waals (vdW) contact has been widely regarded as one of the most potential strategies for exploiting low-resistance metal-semiconductor junctions (MSJs) based on atomically thin transition-metal dichalcogenides (TMDs), but this method is still not efficient due to weak metal-TMD interfacial interactions. Therefore, an understanding of interfacial interactions between metals and TMDs is essential for achieving low-resistance contacts with weak Fermi level pinning (FLP). Herein, we report how the interfacial interactions between metals and TMDs affect the electrical contacts by considering more than 90 MSJs consisting of a semiconducting TMD channel and different types of metal electrodes, including bulk metals, MXenes, and metallic TMDs.
View Article and Find Full Text PDFNat Mater
January 2025
Department of Physics, Harvard University, Cambridge, MA, USA.
Atomically thin van der Waals (vdW) films provide a material platform for the epitaxial growth of quantum heterostructures. However, unlike the remote epitaxial growth of three-dimensional bulk crystals, the growth of two-dimensional material heterostructures across atomic layers has been limited due to the weak vdW interaction. Here we report the double-sided epitaxy of vdW layered materials through atomic membranes.
View Article and Find Full Text PDFSci Rep
January 2025
School of Physics Science and Engineering, Tongji University, Shanghai, 200092, People's Republic of China.
Two-dimensional van der Waals (2D vdW) materials have attracted widespread research interest due to their unique physical properties and potential application prospects. In this study, an atomistic-level dynamical simulation method is employed to investigate the chirality of antiferromagnetic resonance modes in CrI bilayer. Beyond the typical observations of a linear increase in high-frequency resonance mode and a linear decrease in low-frequency resonance mode, we have identified a distinct magnetization precession chirality in the CrI bilayer at low magnetic fields: Spins in different layers exhibit opposite precession chirality.
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