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Author Correction: Epitaxial growth of high-quality GaN with a high growth rate at low temperatures by radical-enhanced metalorganic chemical vapor deposition.
Sci Rep
December 2024
Center for Low-Temperature Plasma Science (cLPS), Nagoya University, Furo-cho, Chikusa, Nagoya, 464-8603, Japan.
Effect of film thickness on phase structure of epitaxial non-doped hafnium oxide films.
Micron
December 2024
Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China; School of Materials Science and Engineering, University of Science and Technology of China, Shenyang 110016, China. Electronic address:
Article Synopsis
- - HfO (hafnium oxide) is a promising dielectric material in electronics, noted for its ferroelectric properties since 2011, with research focusing on stabilizing its polar o-phase structure.
- - The study involved growing non-doped HfO thin films on SrTiO substrates using pulsed laser deposition (PLD), revealing that as film thickness increases, surface roughness also increases.
- - Analysis techniques like atomic force microscopy and X-ray photoelectron spectroscopy confirmed the films' purity and structural quality, while electron microscopy studies showed the HfO/SrTiO interface is atomically abrupt and incoherent.
Phase Tailoring of InSe Toward van der Waals Vertical Heterostructures via Selenization of γ-InSe Semiconductor.
Small Methods
November 2024
Key Laboratory of Polar Materials and Devices (MOE), Shanghai Center of Brain-inspired Intelligent Materials and Devices, School of Physics and Electronic Science, East China Normal University, Shanghai, 200241, China.
The polymorphic nature of InSe leads to excellent phase-dependent physical properties including ferroelectricity, photoelectricity, and especially the intriguing phase change ability, making the precise phase modulation of InSe of fundamental importance but very challenging. Here, the growth of InSe with desired-phase is realized by temperature-controlled selenization of van der Waals (vdW) layered bulk γ-InSe. Detailed results of Raman spectroscopy, scanning electron microscopy (SEM), and state-of-the-art spherical aberration-corrected transmission electron microscopy (Cs-TEM) clearly and consistently show that β-InSe, 3R α-InSe, and 2H α-InSe can be perfectly obtained at ≈270, ≈300, and ≈600 °C, respectively.
View Article and Find Full Text PDFFormation of Twin-Free Single Phase β-InSe Layers via Selenium Diffusion into InP(111)B Substrate.
Cryst Growth Des
November 2024
Department of Chemistry and Biochemistry, The City College of New York, New York, New York 10031, United States.
Indium selenide, InSe, has recently attracted growing interest due to its remarkable properties, including room temperature ferroelectricity, outstanding photoresponsivity, and exotic in-plane ferroelectricity, which open up new regimes for next generation electronics. InSe also provides the important advantage of tuning the electrical properties of ultrathin layers with an external electrical and magnetic field, making it a potential platform to study novel two-dimensional physics. Yet, InSe has many different polymorphs, and it has been challenging to synthesize a single phase material, especially using scalable growth methods, as needed for technological applications.
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