One-Dimensional van der Waals Material Tellurium: Raman Spectroscopy under Strain and Magneto-Transport.

Nano Lett

School of Electrical and Computer Engineering, ‡School of Industrial Engineering, §School of Mechanical Engineering, and ⊥Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, United States.

Published: June 2017

Experimental demonstrations of one-dimensional (1D) van der Waals material tellurium (Te) have been presented by Raman spectroscopy under strain and magneto-transport. Raman spectroscopy measurements have been performed under strains along different principle axes. Pronounced strain response along the c-axis is observed due to the strong intrachain covalent bonds, while no strain response is obtained along the a-axis due to the weak interchain van der Waals interaction. Magneto-transport results further verify its anisotropic property, which results in dramatically distinct magneto-resistance behaviors in terms of three different magnetic field directions. Specifically, phase coherence length extracted from weak antilocalization effect, L ≈ T, claims its two-dimensional (2D) transport characteristics when an applied magnetic field is perpendicular to the thin film. In contrast, L ≈ T is obtained from universal conductance fluctuations once the magnetic field is along the c-axis of Te, which indicates its nature of 1D transport along the helical atomic chains. Our studies, which are obtained on high quality single crystal Te thin film, appear to serve as strong evidence of its 1D van der Waals structure from experimental perspectives. It is the aim of this paper to address this special concept that differs from the previous well-studied 1D nanowires or 2D van der Waals materials.

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http://dx.doi.org/10.1021/acs.nanolett.7b01717DOI Listing

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