Oriented Built-in Electric Field Introduced by Surface Gradient Diffusion Doping for Enhanced Photocatalytic H Evolution in CdS Nanorods.

Element doping has been extensively attempted to develop visible-light-driven photocatalysts, which introduces impurity levels and enhances light absorption. However, the dopants can also become recombination centers for photogenerated electrons and holes. To address the recombination challenge, we report a gradient phosphorus-doped CdS (CdS-P) homojunction nanostructure, creating an oriented built-in electric-field for efficient extraction of carriers from inside to surface of the photocatalyst. The apparent quantum efficiency (AQY) based on the cocatalyst-free photocatalyst is up to 8.2% at 420 nm while the H evolution rate boosts to 194.3 μmol·h·mg, which is 58.3 times higher than that of pristine CdS. This concept of oriented built-in electric field introduced by surface gradient diffusion doping should provide a new approach to design other types of semiconductor photocatalysts for efficient solar-to-chemical conversion.