Soft lithography allows for the simple and low-cost fabrication of nanopatterns with different shapes and sizes over large areas. However, the resolution and the aspect ratio of the nanostructures fabricated by soft lithography are limited by the depth and the physical properties of the stamp. In this work, silicon nanobelts and nanostructures were achieved by combining soft nanolithography patterning with optimized reactive ion etching (RIE) in silicon. Using polymethylmethacrylate (PMMA) nanopatterned layers with thicknesses ranging between 14 and 50 nm, we obtained silicon nanobelts in areas of square centimeters with aspect ratios up to ~1.6 and linewidths of 225 nm. The soft lithographic process was assisted by a thin film of SiO (less than 15 nm) used as a hard mask and RIE. This simple patterning method was also used to fabricate 2D nanostructures (nanopillars) with aspect ratios of ~2.7 and diameters of ~200 nm. We demonstrate that large areas patterned with silicon nanobelts exhibit a high reflectivity peak in the ultraviolet C (UVC) spectral region (280 nm) where some aminoacids and peptides have a strong absorption. We also demonstrated how to tailor the aspect ratio and the wettability of these photonic surfaces (contact angles ranging from 8.1 to 96.2°) by changing the RIE power applied during the fabrication process.
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http://dx.doi.org/10.3390/nano7050109 | DOI Listing |
ACS Appl Mater Interfaces
April 2024
School of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou 310027, P. R. China.
Perovskites have great potential for optoelectronic applications due to their high photoluminescence quantum yield, large absorption coefficient, great defect tolerance, and adjustable band gap. Perovskite heterostructures may further enhance the performance of optoelectronic devices. So far, however, most of perovskite heterostructures are fabricated by mechanical stacking or spin coating, which could introduce a large number of defects or impurities at the heterointerface owing to the random stacking process.
View Article and Find Full Text PDFBiosensors (Basel)
January 2024
Department of Electronic Engineering, National Chin-Yi University of Technology, Taichung 411030, Taiwan.
Field-effect transistor (FET)-based biosensors are powerful analytical tools for detecting trace-specific biomolecules in diverse sample matrices, especially in the realms of pandemics and infectious diseases. The primary concern in applying these biosensors is their stability, a factor directly impacting the accuracy and reliability of sensing over extended durations. The risk of biosensor degradation is substantial, potentially jeopardizing the sensitivity and selectivity and leading to inaccurate readings, including the possibility of false positives or negatives.
View Article and Find Full Text PDFBioconjug Chem
March 2023
Department of Materials Science and Engineering, National Yang Ming Chiao Tung University, Hsinchu 300093, Taiwan, Republic of China.
We report a new peptide-based urchin-shaped structure prepared through two-step self-assembly of tetraphenylethylene-diserine (). Hydrogelation generated nanobelts through the first stage of self-assembly of ; these nanobelts further transformed on silicon wafers into urchin-like microstructures featuring nanosized spines. The presence of the TPE moiety in the hydrogelator resulted in aggregation-induced emission characteristics both in the solution and in the gel phases.
View Article and Find Full Text PDFNanotechnology
May 2022
Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People's Republic of China.
By eliminating the influence of the substrate on parasitic thermal resistance, MEMS suspended structures become one of the accurate nanoscale thermoelectric performance evaluation devices. However, the process of MEMS suspended thermoelectric devices is complex, and its multilayer suspended structure is easy to fracture due to large stress. As a result, optimizing the design of suspended structures is critical in order to reduce manufacturing complexity and increase yield.
View Article and Find Full Text PDFSensors (Basel)
July 2021
Department of Electronic Engineering, Feng Chia University, Taichung 407802, Taiwan.
In this work, a single-crystalline silicon nanobelt field-effect transistor (SiNB FET) device was developed and applied to pH and biomolecule sensing. The nanobelt was formed using a local oxidation of silicon technique, which is a self-aligned, self-shrinking process that reduces the cost of production. We demonstrated the effect of buffer concentration on the sensitivity and stability of the SiNB FET sensor by varying the buffer concentrations to detect solution pH and alpha fetoprotein (AFP).
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