Download full-text PDF

Source
http://www.ncbi.nlm.nih.gov/pmc/articles/PMC5414478PMC
http://dx.doi.org/10.1038/srep46794DOI Listing

Publication Analysis

Top Keywords

corrigendum epitaxy
4
epitaxy highly
4
highly ordered
4
ordered organic
4
organic semiconductor
4
semiconductor crystallite
4
crystallite networks
4
networks supported
4
supported hexagonal
4
hexagonal boron
4

Similar Publications

In this work, the first observation of the space charge limited conduction mechanism (SCLC) in GaAsSb nanowires (NWs) grown by Ga-assisted molecular beam epitaxial technique, and the effect of ultrahigh vacuum in-situ annealing have been investigated. The low onset voltage of the SCLC in the NW configuration has been advantageously exploited to extract trap density and trap distribution in the bandgap of this material system, using simple temperature dependent current-voltage measurements in both the ensemble and single nanowires. In-situ annealing in an ultra-high vacuum revealed significant reduction in the trap density from 1016 cm-3 in as-grown NWs to a low level of 7 * 1014 cm-3 and confining wider trap distribution to a single trap depth at 0.

View Article and Find Full Text PDF

Want AI Summaries of new PubMed Abstracts delivered to your In-box?

Enter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!