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http://dx.doi.org/10.1038/srep46794 | DOI Listing |
J Phys Condens Matter
August 2021
Institute of Physics, Sachivalaya Marg, Bhubaneswar 751005, India.
Nanotechnology
March 2020
Department of Nanoengineering, North Carolina Agricultural and Technical State University, greensboro, North Carolina, UNITED STATES.
In this work, the first observation of the space charge limited conduction mechanism (SCLC) in GaAsSb nanowires (NWs) grown by Ga-assisted molecular beam epitaxial technique, and the effect of ultrahigh vacuum in-situ annealing have been investigated. The low onset voltage of the SCLC in the NW configuration has been advantageously exploited to extract trap density and trap distribution in the bandgap of this material system, using simple temperature dependent current-voltage measurements in both the ensemble and single nanowires. In-situ annealing in an ultra-high vacuum revealed significant reduction in the trap density from 1016 cm-3 in as-grown NWs to a low level of 7 * 1014 cm-3 and confining wider trap distribution to a single trap depth at 0.
View Article and Find Full Text PDFJ Colloid Interface Sci
March 2020
Stockbridge School of Agriculture, University of Massachusetts, Amherst, MA 01003, United States.
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