Bosonic symmetry protected topological (BSPT) states, the bosonic analogue of topological insulators, have attracted enormous theoretical interest in the last few years. Although BSPT states have been classified by various approaches, there is so far no successful experimental realization of any BSPT state in two or higher dimensions. In this paper, we propose that a two-dimensional BSPT state with U(1)×U(1) symmetry can be realized in bilayer graphene in a magnetic field. Here the two U(1) symmetries represent total spin S^{z} and total charge conservation, respectively. The Coulomb interaction plays a central role in this proposal-it gaps out all the fermions at the boundary, so that only bosonic charge and spin degrees of freedom are gapless and protected at the edge. Based on the above conclusion, we propose that the bulk quantum phase transition between the BSPT and trivial phase, which can be driven by applying both magnetic and electric fields, can become a "bosonic phase transition" with interactions. That is, only bosonic modes close their gap at the transition, which is fundamentally different from all the well-known topological insulator to trivial insulator transitions that occur for free fermion systems. We discuss various experimental consequences of this proposal.
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http://dx.doi.org/10.1103/PhysRevLett.118.126801 | DOI Listing |
Nanoscale
March 2025
Laboratório Nacional de Luz Síncrotron (LNLS), Centro Nacional de Pesquisa em Energia e Materiais (CNPEM), Campinas, SP, 13083-970, Brazil.
This work investigates the plasmonic properties of a twisted bilayer graphene (TBG) and talc heterostructure. Talc, a naturally occurring phyllosilicate, promotes p-type charging of graphene, supporting high charge mobility and strong interaction between graphene plasmons and talc's phonon polaritons. This interaction results in the formation of surface plasmon-phonon polariton (SP) modes, which are detected using infrared scattering-type scanning near-field optical microscopy (IR s-SNOM) at room temperature.
View Article and Find Full Text PDFNanomaterials (Basel)
February 2025
School of Physics and Electronic Information, Yunnan Normal University, Kunming 650500, China.
We theoretically investigate the comprehensive modulation effect of interlayer twisting and external electric field to the two-photon absorption (TPA) in twisted graphene/hexagonal boron nitride (tG/hBN) heterojunction with small twist angles (2° < θ < 10°) starting from an effective continuum model. It is found that the TPA of tG/hBN is extended to the visible light band from infrared light band of that in twisted bilayer graphene (tBLG) due to the increase in energy band gap caused by twisting and the potential energy of the boron nitride atomic layer. And the TPA coefficient is enhanced several times via an external electric field, which increases the density of states, leading to an increase transition probability for two-photon absorption.
View Article and Find Full Text PDFAngew Chem Int Ed Engl
March 2025
Georg-August-Universitat Gottingen III Physikalisches Institut, Drittes Physikalisches Institut-Biophysik, Friedrich-Hund-Platz 1, 37077, Göttingen, GERMANY.
Polymer-supported or tethered lipid bilayers serve as versatile platforms for mimicking plasma membrane structure and dynamics, yet the impact of polymer supports on lipid bilayers remains largely unresolved. In this study, we introduce a novel methodology that combines graphene-induced energy transfer (GIET) with line-scan fluorescence lifetime correlation spectroscopy (lsFLCS) to examine the structural and dynamic properties of lipid bilayers. Our findings reveal that polymer supports markedly influence both the structural parameters, such as the membrane height from the substrate, its thickness, as well as dynamic properties, including leaflet-specific diffusion coefficients and interleaflet coupling.
View Article and Find Full Text PDFPhys Rev Lett
February 2025
University of Science and Technology of China, Suzhou Institute for Advanced Research, Suzhou 215123, China.
Two-dimensional van der Waals materials, possessing a unique stacking degree of freedom, offer an alternative strategy for modulating their properties through interlayer sliding. Controlling the stacking order is crucial for tuning material properties and developing slidetronics-based devices. Here, using machine-learning potentials, we propose a mechanical bending approach to manipulate stacking orders and related properties in sliding ferroelectric h-BN, 3R-MoS_{2}, and nonferroelectric bilayer graphene.
View Article and Find Full Text PDFPhys Rev Lett
February 2025
Empa - Swiss Federal Laboratories for Materials Science and Technology, nanotech@surfaces Laboratory, Dübendorf 8600, Switzerland.
Defect engineering in two-dimensional semiconductors has been exploited to tune the optoelectronic properties and introduce new quantum states in the band gap. Chalcogen vacancies in transition metal dichalcogenides in particular have been found to strongly impact charge carrier concentration and mobility in 2D transistors as well as feature subgap emission and single-photon response. In this Letter, we investigate the layer-dependent charge-state lifetime of Se vacancies in WSe_{2}.
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