The Study of Electrical Properties for Multilayer LaO/AlO Dielectric Stacks and LaAlO Dielectric Film Deposited by ALD.

The capacitance and leakage current properties of multilayer LaO/AlO dielectric stacks and LaAlO dielectric film are investigated in this paper. A clear promotion of capacitance properties is observed for multilayer LaO/AlO stacks after post-deposition annealing (PDA) at 800 °C compared with PDA at 600 °C, which indicated the recombination of defects and dangling bonds performs better at the high-k/Si substrate interface for a higher annealing temperature. For LaAlO dielectric film, compared with multilayer LaO/AlO dielectric stacks, a clear promotion of trapped charges density (N ) and a degradation of interface trap density (D ) can be obtained simultaneously. In addition, a significant improvement about leakage current property is observed for LaAlO dielectric film compared with multilayer LaO/AlO stacks at the same annealing condition. We also noticed that a better breakdown behavior for multilayer LaO/AlO stack is achieved after annealing at a higher temperature for its less defects.