Single-Mode Lasing from "Giant" CdSe/CdS Core-Shell Quantum Dots in Distributed Feedback Structures.

"Giant" semiconductor quantum dots (GQDs) have tremendous potential for applications in laser devices. Here, CdSe/CdS core-shell GQDs (11 monolayers) have been synthesized as lasing gain material. The photoluminescence decay of the GQD ensemble is single-exponential, and the two-photon absorption cross-section is above 10 GM. This article presents a versatile method for fabrication of CdSe/CdS GQD distributed feedback (DFB) lasers by laser interference ablation. A high-quality surface-relief grating structure can be readily created on the GQD thin films, and the relationship between laser beam intensity and surface modulation depth is studied. With appropriate periods, single-mode lasing emission has been detected from these devices under excitation wavelengths of 400 and 800 nm. The laser thresholds are as low as 0.028 and 1.03 mJ cm, with the lasing Q-factors of 709 and 586, respectively. Lasing operation is realized from the direct laser interference-ablated QD DFB structures for the first time.