Advanced techniques for overcoming problems encountered during in situ electron holography experiments in which a voltage is applied to an ionic conductor are reported. The three major problems encountered were 1) electric-field leakage from the specimen and its effect on phase images, 2) high electron conductivity of damage layers formed by the focused ion beam method, and 3) chemical reaction of the specimen with air. The first problem was overcome by comparing experimental phase distributions with simulated images in which three-dimensional leakage fields were taken into account, the second by removing the damage layers using a low-energy narrow Ar ion beam, and the third by developing an air-tight biasing specimen holder.
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http://dx.doi.org/10.1016/j.ultramic.2017.03.012 | DOI Listing |
Nanomaterials (Basel)
December 2024
Nano Materials Research Division, Korea Institute of Materials Science, Changwon 51508, Republic of Korea.
Metasurface holography, capable of fully engineering the wavefronts of light in an ultra-compact manner, has emerged as a promising route for vivid imaging, data storage, and information encryption. However, the primary manufacturing method for visible metasurface holography remains limited to the expensive and low-productivity electron-beam lithography (EBL). Here, we experimentally demonstrate the polarization-insensitive visible metasurface holography fabricated by high-throughput and low-cost nanoimprint lithography (NIL).
View Article and Find Full Text PDFACS Appl Mater Interfaces
December 2024
Materials Science Division, Argonne National Laboratory, Lemont, Illinois 60439, United States.
In hafnia-based thin-film ferroelectric devices, chemical phenomena during growth and processing, such as oxygen vacancy formation and interfacial reactions, appear to strongly affect device performance. However, the correlation between the structure, chemistry, and electrical potentials at the nanoscale in these devices is not fully known, making it difficult to understand their influence on device properties. Here, we directly image the composition and electrostatic potential with nanometer resolution in the cross section of a nanocrystalline W/HfZrO (HZO)/W ferroelectric capacitor using multimodal electron microscopy.
View Article and Find Full Text PDFAdv Mater
November 2024
CEMES, Université de Toulouse, CNRS, 29 rue Jeanne Marvig, Toulouse Cedex, 31055, France.
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