Vanadium (V)-doped tin oxide (SnO) one-dimensional porous nanofibers (PNFs) were fabricated for the hydrogen detection application. V-doping changes the distances of different facets of the SnO crystal in different roles, and therefore deform or distort the SnO structure. The modulation effects of V and V on hydrogen detecting performance were discussed. With a suitable amount of V-doping, the porous SnO nanofibers exhibits ~66% increase of response sensitivity, 33% faster in response (2s) and 50% faster in recovery time (1s), comparing with undoped SnO nanofibers.
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http://dx.doi.org/10.1016/j.talanta.2017.03.013 | DOI Listing |
Bioelectrochemistry
December 2024
School of Chemistry and Chemical Engineering, Southeast University, Nanjing 211189, China. Electronic address:
Early diagnosis of tumors is becoming increasingly important in modern healthcare. As studies have demonstrated, Poly(ADP)ribose polymerase-1 (PARP-1) is overexpressed in more aggressive tumors. Consequently, sensitive detection of PARP-1 activity holds significant practical importance in clinical diagnostics and biomedical research.
View Article and Find Full Text PDFACS Appl Energy Mater
December 2024
School of Chemistry, University of Bristol, Cantocks Close, BS8 1TS Bristol, U.K.
Rationalizing the role of chemical interactions in the precursor solutions on the structure, morphology, and performance of thin-film CuZnSn(S,Se) (CZTSSe) is key for the development of bifacial and other photovoltaic (PV) device architectures designed by scalable solution-based methods. In this study, we uncover the impact of dimethylformamide (DMF) and isopropanol (IPA) solvent mixtures on cation complexation and rheology of the precursor solution, as well as the corresponding morphology, composition, and PV performance of CZTSSe thin-film grown on fluorine-doped tin oxide (FTO). We find that increasing the proportion of IPA leads to a nonlinear increase in dynamic viscosity due to the strong repulsion between DMF and IPA, which is characterized by an interaction cohesion parameter of 3.
View Article and Find Full Text PDFNanomaterials (Basel)
December 2024
Graduate School of Integrated Science and Technology, Nagasaki University, 1-14 Bunkyo-machi, Nagasaki 852-8521, Japan.
The electronic nose is an increasingly useful tool in many fields and applications. Our thermal electronic nose approach, based on nanostructured metal oxide chemiresistors in a thermal gradient, has the advantage of being tiny and therefore integrable in portable and wearable devices. Obviously, a wise choice of the nanomaterial is crucial for the device's performance and should therefore be carefully considered.
View Article and Find Full Text PDFNanomaterials (Basel)
December 2024
Division of Physics, Engineering, Mathematics and Computer Sciences and Optical Science Center for Applied Research, Delaware State University, Dover, DE 19901, USA.
This study offers a comprehensive summary of the current states as well as potential future directions of transparent conducting oxides (TCOs), particularly tin-doped indium oxide (ITO), the most readily accessible TCO on the market. Solar cells, flat panel displays (FPDs), liquid crystal displays (LCDs), antireflection (AR) coatings for airbus windows, photovoltaic and optoelectronic devices, transparent p-n junction diodes, etc. are a few of the best uses for this material.
View Article and Find Full Text PDFLangmuir
December 2024
Department of Materials Engineering, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan.
A solution-gated indium-tin-oxide (ITO)-based field effect transistor (FET) without interfaces among the source, channel, and drain electrodes, which is called the one-piece ITO-FET, can be simply fabricated from a single sheet of ITO by etching the channel region. The direct contact of the ITO channel surface with a sample solution contributes to a steep subthreshold slope and a high on/off ratio. In this study, we have examined the effects of oxygen vacancies and hydroxy groups at the ITO channel surface on the electrical characteristics of the one-piece ITO-FET.
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