Shallow Acceptor State in Mg-Doped CuAlO and Its Effect on Electrical and Optical Properties: An Experimental and First-Principles Study.

Shallow acceptor states in Mg-doped CuAlO and their effect on structural, electrical, and optical properties are investigated by combining first-principles calculations and experiments. First-principles calculations demonstrate that Mg substituting at the Al site in CuAlO plays the role of shallow acceptor and has a low formation energy, suggesting that Mg doping can increase hole concentration and improve the conductivity of CuAlO. Hall effect measurements indicate that the hole concentration of the Mg-doped CuAlO thin film is 2 orders of magnitude higher than that of undoped CuAlO. The best room temperature conductivity of 8.0 × 10 S/cm is obtained. A band gap widening is observed in the optical absorption spectra of Mg-doped CuAlO, which is well supported by the results from first-principles electronic structure calculations.