AI Article Synopsis
- The study focuses on the electrical properties of photodetectors made from p-GaAs nanowire arrays on n-GaAs substrates, showing excellent performance with an ideality factor of n = 1.0 and a high rectification ratio.
- An analysis indicates that the leakage current at low bias is mainly due to generation-recombination processes involving midgap states, with an activation energy of 690 meV, roughly half that of GaAs's bandgap.
- The research also uses three-dimensional electrical simulations to address the absence of a recombination current regime at low forward bias and discusses related capacitance-voltage analysis challenges, showcasing the competitive performance of nanowire devices compared to traditional bulk devices.
Article Abstract
We present the electrical properties of p-n junction photodetectors comprised of vertically oriented p-GaAs nanowire arrays on the n-GaAs substrate. We measure an ideality factor as low as n = 1.0 and a rectification ratio >10 across all devices, with some >10, comparable to the best GaAs thin film photodetectors. An analysis of the Arrhenius plot of the saturation current yields an activation energy of 690 meV-approximately half the bandgap of GaAs-indicating generation-recombination current from midgap states is the primary contributor to the leakage current at low bias. Using fully three-dimensional electrical simulations, we explain the lack of a recombination current dominated regime at low forward bias, as well as some of the issues related to analysis of the capacitance-voltage characteristics of nanowire devices. This work demonstrates that, through proper design and fabrication, nanowire-based devices can perform as well as their bulk device counterparts.
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| http://dx.doi.org/10.1021/acs.nanolett.7b00024 | DOI Listing |
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