AI Article Synopsis
- Ultrathin three-dimensional topological insulator films, specifically (BiSb)Se, show high potential for field effect devices due to their unique properties.
- These films were fabricated on SrTiO substrates and exhibited a remarkable resistance change of approximately 25,000% when influenced by back gate voltage.
- The significant ON/OFF ratio is attributed to a combination of Sb-doping and reduced film thickness, suggesting possibilities for advanced spin transistors based on topological insulators.
Article Abstract
Ultrathin three-dimensional topological insulator films are promising for use in field effect devices. (BiSb)Se ultrathin films were fabricated on SrTiO substrate, where large resistance changes of ∼25 000% could be achieved using the back gate voltage. We suggest that the large ON/OFF ratio was caused by the combined effect of Sb-doping and the reduction of film thickness down to the ultrathin regime. The crossover of different quantum transport under an electric field may form the basis for topological insulators (TI)-based spin transistors with large ON/OFF ratios in the future.
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| http://dx.doi.org/10.1021/acsami.7b00541 | DOI Listing |
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