Controlling the growth of two-dimensional (2D) transition metal dichalcogenides (TMDCs) is an important step toward utilizing these materials for either electronics or catalysis. Here, we report a new surface-templated growth method that enables the fabrication of MoO/MoS and MoO/MoTe core/shell nanoplates epitaxially aligned on (0001)-oriented 4H-silicon carbide and sapphire substrates. These heterostructures are characterized by a variety of techniques to identify the chemical and structural nature of the interface. Scanning electron microscopy shows that the nanoplates feature 3-fold symmetry indicative of epitaxial growth. Raman spectroscopy indicates that the MoO/MoS nanoplates are composed of co-localized MoO and MoS, and transmission electron microscopy confirms that the nanoplates feature MoO cores with 2D MoS coatings. Locked-coupled X-ray diffraction shows that the interfacial planes of the MoO nanoplate cores belong to the {010} and {001} families. This method may be further generalized to create novel nanostructured interfaces with single-crystal substrates.
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http://dx.doi.org/10.1021/acs.jpclett.7b00307 | DOI Listing |
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