Mid-infrared laser sources are of great interest for various applications, including light detection and ranging, spectroscopy, communication, trace-gas detection, and medical sensing. Silicon photonics is a promising platform that enables these applications to be integrated on a single chip with low cost and compact size. Silicon-based high-power lasers have been demonstrated at 1.55 μm wavelength, while in the 2 μm region, to the best of our knowledge, high-power, high-efficiency, and monolithic light sources have been minimally investigated. In this Letter, we report on high-power CMOS-compatible thulium-doped distributed feedback and distributed Bragg reflector lasers with single-mode output powers up to 267 and 387 mW, and slope efficiencies of 14% and 23%, respectively. More than 70 dB side-mode suppression ratio is achieved for both lasers. This work extends the applicability of silicon photonic microsystems in the 2 μm region.
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http://dx.doi.org/10.1364/OL.42.001181 | DOI Listing |
Nanotechnology
January 2025
Experimentalphysik, Saarland University, Fachrichtung 7.2, Campus E2.6, 66123 Saarbruecken, Saarbrucken, Saarland, 66123, GERMANY.
Color centers are promising single-photon emitters owing to their operation at room temperature and high photostability. In particular, using nanodiamonds as a host material is of interest for sensing and metrology. Furthermore, being a solid-state system allows for incorporation to photonic systems to tune both the emission intensity and photoluminescence spectrum and therefore adapt the individual color center to desired properties.
View Article and Find Full Text PDFAdv Mater
January 2025
Division of Materials Science and Engineering, Hanyang University, Seoul, 04763, Republic of Korea.
The evolution of display technologies is rapidly transitioning from traditional screens to advanced augmented reality (AR)/virtual reality (VR) and wearable devices, where quantum dots (QDs) serve as crucial pure-color emitters. While solution processing efficiently forms QD solids, challenges emerge in subsequent stages, such as layer deposition, etching, and solvent immersion. These issues become especially pronounced when developing diverse form factors, necessitating innovative patterning methods that are both reversible and sustainable.
View Article and Find Full Text PDFMaterials (Basel)
December 2024
Carnegie Mellon University, 5000 Forbes Avenue, Pittsburgh, PA 15213, USA.
Arguably, SiC technology is the most rapidly expanding IC manufacturing technology driven mostly by the aggressive roadmap for battery electric vehicle penetration and also industrial high-voltage/high-power applications. This paper provides a comprehensive overview of the state of the art of SiC technology focusing on the challenges starting from the difficult and lengthy SiC substrate growth all the way to the complex MOSFET assembly processes. We focus on the differentiation from the established Si manufacturing processes and provide a comprehensive list of references as well as a brief description of our own research into the key manufacturing processes in this technology.
View Article and Find Full Text PDFJ Comput Assist Tomogr
January 2025
GE HealthCare, Waukesha, WI.
Objective: Patient positioning during clinical practice can be challenging, and mispositioning leads to a change in CT number. CT number fluctuation was assessed in single-energy (SE) EID, dual-energy (DE) EID, and deep silicon photon-counting detector (PCD) CT over water-equivalent diameter (WED) with different mispositions.
Methods: A phantom containing five clinically relevant inserts (Mercury Phantom, Gammex) was scanned on a clinical EID CT and a deep silicon PCD CT prototype at vertical positions of 0, 4, 8, and 12 cm.
Langmuir
January 2025
Department of Physics, Khalifa University of Science and Technology, Abu Dhabi 127788, United Arab Emirates.
Self-assembled gold nanoparticles (Au-NPs) possess distinctive properties that are highly desirable in diverse nanotechnological applications. This study meticulously explores the size-dependent behavior of Au-NPs under an electric field, specifically focusing on sizes ranging from 5 to 40 nm, and their subsequent assembly into 2D monolayers on an n-type silicon substrate. The primary objective is to refine the assembly process and augment the functional characteristics of the resultant nanostructures.
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